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SPT415

更新时间： 2024-11-28 21:01:59
品牌 Logo 应用领域
HUTSON 栅三端双向交流开关栅极
页数 文件大小 规格书
4页 487K
描述
4 Quadrant Logic Level TRIAC, 400V V(DRM), 15A I(T)RMS

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中文翻译

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SPT415 技术参数

生命周期：Contact Manufacturer包装说明：POST/STUD MOUNT, O-MUPM-D2
Reach Compliance Code：unknownHTS代码：8541.30.00.80
风险等级：5.78外壳连接：MAIN TERMINAL 2
配置：SINGLE关态电压最小值的临界上升速率：100 V/us
最大直流栅极触发电流：150 mA最大直流栅极触发电压：2.5 V
最大维持电流：60 mAJESD-30 代码：O-MUPM-D2
最大漏电流：1 mA元件数量：1
端子数量：2最高工作温度：110 °C
最低工作温度：-40 °C封装主体材料：METAL
封装形状：ROUND封装形式：POST/STUD MOUNT
认证状态：Not Qualified最大均方根通态电流：15 A
断态重复峰值电压：400 V子类别：TRIACs
表面贴装：NO端子形式：SOLDER LUG
端子位置：UPPER触发设备类型：4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches：1

SPT415 数据手册

 浏览型号SPT415的Datasheet PDF文件第2页浏览型号SPT415的Datasheet PDF文件第3页浏览型号SPT415的Datasheet PDF文件第4页 
MAXIMUM RATINGS  
REPETITIVE PEAK OFF-STATE VOLTAGE (1)  
GATE OPEN, AND TJ = 110° C  
SYMBOL VDRM  
DEVICE NUMBERS  
UNITS  
200  
*T215  
*T415  
*T615  
*T225  
*T425  
*T625  
*T230  
*T430  
*T630  
*T240  
*T440  
*T640  
VDRM  
400  
600  
VOLT  
RMS ON-STATE CURRENT AT TC = 80º C AND  
CONDUCTION, ANGLE OF 360º  
PEAK SURGE (NON-REPETITIVE) ON-STATE  
CURRENT, ONE-CYCLE, AT 50HZ OR 60HZ  
IT(RMS)  
ITSM  
15  
25  
30  
40  
AMP  
AMP  
150  
250  
300  
400  
PEAK GATE - TRIGGER CURRENT FOR 3µSEC. MAX.  
PEAK GATE – POWER DISSIPATION AT IGT < IGTM  
AVERAGE GATE - POWER DISSIPATION  
STORAGE TEMPERATURE RANGE  
IGTM  
PGM  
PG(AV)  
TSTG  
TOPER  
4
4
12  
40  
0.75  
12  
40  
0.75  
AMP  
WATT  
WATT  
°C  
40  
0.8  
40  
0.8  
-40 to +150  
-40 to +110  
OPERATING TEMPERATURE RANGE, TJ  
°C  
ELECTRICAL CHARACTERISTICS  
AT SPECIFIED CASE TEMPERATURE  
PEAK OFF - STATE CURRENT (1) GATE OPEN  
TC = 110° C VDRM = MAX. RATING  
MA  
MAX.  
IDRM  
VTM  
IHO  
1.0  
2.2  
60  
1.0  
1.0  
2.0  
60  
1.0  
2.0  
60  
MAXIMUM ON - STATE VOLTAGE, (1)  
AT TC = 25° C AND IT = RATED AMPS  
VOLT  
MAX.  
2.5  
60  
DC HOLDING CURRENT, (1) GATE  
OPEN AND TC = 25° C  
MA  
MAX.  
CRITICAL RATE-OF-RISE OF OFF-  
STATE VOLTAGE, (1) FOR VD =  
VDRM GATE OPEN, TC = 110° C  
CRITICAL  
dv/dt  
100  
100  
3
200  
3
200  
3
V/µSEC.  
V/µSEC.  
CRITICAL RATE-OF-RISE OF  
COMMUTATION VOLTAGE, (1) AT  
TC = 80° C, GATE UNENERGIZED,  
VD = VDRM, IT = IT (RMS)  
COMMUTATING  
3
dv/dt  
DC GATE - TRIGGER CURRENT FOR  
VD = 12VDC. RL = 30 W AND AT TC = 25° C  
(T2 + GATE + T2 - GATE-) Q 1 & 3  
(T2 + GATE - T2 - GATE +) Q 2 & 4  
(2)  
IGT  
100 I, III 100 I, III 100 I, III  
150 II, IV 150 II, IV 150 II, IV 150 II, IV  
100 I, III  
MA  
MAX.  
DC GATE - TRIGGER VOLTAGE FOR  
VD = 12VDC. RL = 30 W AND AT TC = 25° C  
VOLT  
MAX.  
VGT  
TGT  
2.5  
3
2.5  
3
2.5  
3
2.5  
3
GATE CONTROLLED TURN-ON TIME  
FOR VD = VDRM IGT = 200MA, TR = 0.1 µSEC.  
IT = 10A (PEAK) AND TC = 25° C  
µSEC.  
THERMAL RESISTANCE, JUNCTION-TO-CASE  
PRESS-FIT  
STUD  
ISOLATED STUD  
1.8  
1.8  
2.1  
1.8  
1.8  
2.1  
1.8  
1.8  
2.1  
1.8  
1.8  
2.1  
R0J-C  
°C / WATT  
TYP  
Notes:  
(1) All values apply in either direction.  
(2) Other gate options available; Consult factory.  
WARNING  
Isolated stud products should be handled with care. The ceramic used  
in these thyristors contains BERYLLIUM OXIDE as a major ingredient.  
P
PRESS FIT  
DO NOT crush, grind or abrade these portions of the thyristors because  
the dust resulting from such action may be HARZARDOUS if INHALED.  
SP  
PRESS FIT WITH STUD MOUNT  
PRESS FIT WITH ISOLATED STUD  
MOUNT  
SIP  
*Add prefix for package style desired.  
SOLID STATE CONTROL DEVICES  
25  
1234

中文翻译

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