Datasheet > SPPBI07N60S5

SPPBI07N60S5

更新时间： 2024-11-24 22:26:51

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
12页	332K
描述
Cool MOS⑩ Power Transistor

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中文翻译

获取价格

数据手册

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SPPBI07N60S5 数据手册

SPP07N60S5, SPB07N60S5

SPI07N60S5

Cool MOS™ Power Transistor

Feature

• New revolutionary high voltage technology

600

0.6

7.3

Ω

DS(on)

• Worldwide best R

in TO 220

DS(on)

P-TO262

P-TO263-3-2

P-TO220-3-1

• Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dt rated

• Ultra low effective capacitances

• Improved transconductance

P-TO220-3-1

Type

Package

P-TO220-3-1 Q67040-S4172

P-TO263-3-2 Q67040-S4185

P-TO262

Ordering Code

Marking

07N60S5

SPP07N60S5

SPB07N60S5

SPI07N60S5

Q67040-S4328

Maximum Ratings

Parameter

Symbol

Value

Unit

Continuous drain current

T = 25 °C

7.3

4.6

T = 100 °C

14.6

230

Pulsed drain current, t limited by T

Avalanche energy, single pulse

jmax

D puls

I = - A, V = 50 V

jmax

0.5

7.3

Avalanche energy, repetitive t limited by T

I = 7.3 A, V = 50 V

Avalanche current, repetitive t limited by T

jmax AR

Gate source voltage

±20

Gate source voltage AC (f >1Hz)

tot

Power dissipation, T = 25°C

°C

Operating and storage temperature

T , T

-55... +150

stg

Page 1

Rev. 2.1

2004-03-30

12 3 4 5 6 7...12

中文翻译

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