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SPP7401S32RG PDF预览

SPP7401S32RG

更新时间: 2024-11-30 03:31:23
品牌 Logo 应用领域
擎力 - SYNC-POWER /
页数 文件大小 规格书
8页 201K
描述
P-Channel Enhancement Mode MOSFET

SPP7401S32RG 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:compliant风险等级:5.61
Base Number Matches:1

SPP7401S32RG 数据手册

 浏览型号SPP7401S32RG的Datasheet PDF文件第2页浏览型号SPP7401S32RG的Datasheet PDF文件第3页浏览型号SPP7401S32RG的Datasheet PDF文件第4页浏览型号SPP7401S32RG的Datasheet PDF文件第5页浏览型号SPP7401S32RG的Datasheet PDF文件第6页浏览型号SPP7401S32RG的Datasheet PDF文件第7页 
SPP7401  
P-Channel Enhancement Mode MOSFET  
DESCRIPTION  
APPLICATIONS  
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Power Management in Note book  
The SPP7401 is the P-Channel logic enhancement mode  
power field effect transistors are produced using high cell  
density , DMOS trench technology.  
This high density process is especially tailored to  
minimize on-state resistance.  
These devices are particularly suited for low voltage  
application such as cellular phone and notebook  
computer power management and other battery powered  
circuits where high-side switching , and low in-line  
power loss are needed in a very small outline surface  
mount package.  
Portable Equipment  
Battery Powered System  
DC/DC Converter  
Load Switch  
DSC  
LCD Display inverter  
FEATURES  
PIN CONFIGURATION ( SOT-323 ; SC-70 )  
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-30V/-2.8A,RDS(ON)=115m@VGS=- 10V  
-30V/-2.5A,RDS(ON)=125m@VGS=-4.5V  
-30V/-1.5A,RDS(ON)=170m@VGS=-2.5V  
-30V/-1.0A,RDS(ON)=240m@VGS=-1.8V  
Super high density cell design for extremely low  
RDS (ON)  
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Exceptional on-resistance and maximum DC  
current capability  
SOT-323 ( SC–70 ) package design  
PART MARKING  
2007/01/16 Ver.3  
Page 1  

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