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SPP6506 PDF预览

SPP6506

更新时间: 2024-11-30 03:31:23
品牌 Logo 应用领域
擎力 - SYNC-POWER /
页数 文件大小 规格书
8页 203K
描述
Dual P-Channel Enhancement Mode MOSFET

SPP6506 数据手册

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SPP6506  
Dual P-Channel Enhancement Mode MOSFET  
DESCRIPTION  
APPLICATIONS  
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Power Management in Note book  
The SPP6506 is the Dual P-Channel enhancement mode  
power field effect transistors are produced using high cell  
density , DMOS trench technology. This high density  
process is especially tailored to minimize on-state  
resistance and provide superior switching performance.  
These devices are particularly suited for low voltage  
applications such as notebook computer power  
management and other battery powered circuits where  
high-side switching , low in-line power loss, and  
resistance to transients are needed.  
Portable Equipment  
Battery Powered System  
DC/DC Converter  
Load Switch  
DSC  
LCD Display inverter  
FEATURES  
PIN CONFIGURATION( SOT-23-6L )  
‹
P-Channel  
-30V/-2.8A,RDS(ON)=105m@VGS=- 10V  
-30V/-2.5A,RDS(ON)=135m@VGS=-4.5V  
Super high density cell design for extremely low  
RDS (ON)  
Exceptional on-resistance and maximum DC  
current capability  
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SOT-23-6L package design  
PART MARKING  
2006/08/12 Ver.2  
Page 1  

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