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SPP6307S36RGB PDF预览

SPP6307S36RGB

更新时间: 2024-11-30 12:48:51
品牌 Logo 应用领域
擎力 - SYNC-POWER /
页数 文件大小 规格书
8页 212K
描述
P-Channel Enhancement Mode MOSFET

SPP6307S36RGB 数据手册

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SPP6307  
P-Channel Enhancement Mode MOSFET  
DESCRIPTION  
APPLICATIONS  
Drivers : Relays/Solenoids/Lamps/Hammers  
Power Supply Converter Circuits  
Load/Power Switching Cell Phones, Pagers  
The SPP6307 is the P-Channel enhancement mode  
power field effect transistors are produced using high cell  
density , DMOS trench technology. This high density  
process is especially tailored to minimize on-state  
resistance and provide superior switching performance.  
These devices are particularly suited for low voltage  
applications such as notebook computer power  
management and other battery powered circuits where  
high-side switching , low in-line power loss, and  
resistance to transients are needed.  
FEATURES  
PIN CONFIGURATION( SOT-363 )  
P-Channel  
-20V/0.45A,RDS(ON)= 0.65@VGS=-4.5V  
-20V/0.35A,RDS(ON)= 0.90@VGS=-2.5V  
-20V/0.25A,RDS(ON)= 1.5@VGS=-1.8V  
Super high density cell design for extremely low  
RDS (ON)  
Exceptional on-resistance and maximum DC  
current capability  
SOT-363 package design  
PART MARKING  
2013/11/20 Ver.1  
Page 1  

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