Datasheet > SPP4435S8RG

SPP4435S8RG

更新时间： 2024-11-29 06:13:27

品牌	Logo	应用领域
擎力 - SYNC-POWER		/
页数	文件大小	规格书
8页	229K
描述
P-Channel Enhancement Mode MOSFET

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SPP4435S8RG 数据手册

SPP4435

P-Channel Enhancement Mode MOSFET

DESCRIPTION

APPLICATIONS

Power Management in Note book

The SPP4435 is the P-Channel logic enhancement mode

power field effect transistors are produced using high cell

density , DMOS trench technology.

This high density process is especially tailored to

minimize on-state resistance.

These devices are particularly suited for low voltage

application , notebook computer power management and

other battery powered circuits where high-side

switching .

Portable Equipment

Battery Powered System

DC/DC Converter

Load Switch

DSC

LCD Display inverter

FEATURES

PIN CONFIGURATION(SOP – 8P)

-30V/-9.2A,RDS(ON)= 25mΩ@VGS=- 10V

-30V/-7.0A,RDS(ON)= 35mΩ@VGS=-4.5V

Super high density cell design for extremely low

RDS (ON)

Exceptional on-resistance and maximum DC

current capability

SOP – 8P package design

PART MARKING

2008/12/01 Ver.2

Page 1

12 3 4 5 6 7 8

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