Datasheet > SPP3413W

SPP3413W

更新时间： 2024-11-30 01:12:27

品牌	Logo	应用领域
擎力 - SYNC-POWER		/
页数	文件大小	规格书
8页	229K
描述
P-Channel Enhancement Mode MOSFET

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SPP3413W 数据手册

SPP3413W

P-Channel Enhancement Mode MOSFET

DESCRIPTION

APPLICATIONS

Power Management in Note book

The SPP3413W is the P-Channel logic enhancement

mode power field effect transistors are produced using

high cell density , DMOS trench technology.

This high density process is especially tailored to

minimize on-state resistance.

These devices are particularly suited for low voltage

application such as cellular phone and notebook

computer power management and other battery powered

circuits where high-side switching , and low in-line

power loss are needed in a very small outline surface

mount package.

Portable Equipment

Battery Powered System

DC/DC Converter

Load Switch

DSC

LCD Display inverter

FEATURES

PIN CONFIGURATION(SOT-23)

-20V/-3.4A,RDS(ON)= 95mΩ@VGS=-4.5V

-20V/-2.4A,RDS(ON)=120mΩ@VGS=-2.5V

-20V/-1.7A,RDS(ON)=145mΩ@VGS=-1.8V

Super high density cell design for extremely low

RDS (ON)

Exceptional on-resistance and maximum DC

current capability

SOT-23 package design

PART MARKING

2012/04/18 Ver.2

Page 1

12 3 4 5 6 7 8

中文翻译

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