Datasheet > SPP2319

SPP2319

更新时间： 2024-11-05 06:13:27

品牌	Logo	应用领域
擎力 - SYNC-POWER		/
页数	文件大小	规格书
8页	205K
描述
P-Channel Enhancement Mode MOSFET

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SPP2319 数据手册

SPP2319

P-Channel Enhancement Mode MOSFET

DESCRIPTION

APPLICATIONS

Power Management in Note book

The SPP2319 is the P-Channel logic enhancement mode

power field effect transistors are produced using high cell

density , DMOS trench technology.

This high density process is especially tailored to

minimize on-state resistance.

These devices are particularly suited for low voltage

application such as cellular phone and notebook

computer power management and other battery powered

circuits where high-side switching , and low in-line

power loss are needed in a very small outline surface

mount package.

Portable Equipment

Battery Powered System

DC/DC Converter

Load Switch

DSC

LCD Display inverter

FEATURES

PIN CONFIGURATION ( SOT-23-3L )

-40V/-3.0A,RDS(ON)= 96mΩ@VGS=- 10V

-40V/-2.8A,RDS(ON)=110mΩ@VGS=-4.5V

Super high density cell design for extremely low

RDS (ON)

Exceptional on-resistance and maximum DC

current capability

SOT-23-3L package design

PART MARKING

2009/07/15 Ver.1

Page 1

12 3 4 5 6 7 8

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