Datasheet > SPN8919S89RGB

SPN8919S89RGB

更新时间： 2024-11-11 12:49:07

品牌	Logo	应用领域
擎力 - SYNC-POWER		/
页数	文件大小	规格书
8页	236K
描述
N-Channel Enhancement Mode MOSFET

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SPN8919S89RGB 数据手册

SPN8919

N-Channel Enhancement Mode MOSFET

DESCRIPTION

APPLICATIONS

High Frequency Small Power Switching for

MB/NB/VGA

Network DC/DC Power System

Load Switch

The SPN8919 is the N-Channel logic enhancement mode

power field effect transistor which is produced using super

high cell density DMOS trench technology. The SPN8910

has been designed specifically to improve the overall

efficiency of DC/DC converters using either synchronous or

conventional switching PWM controllers. It has been

optimized for low gate charge, low RDS(ON) and fast

switching speed.

FEATURES

PIN CONFIGURATION

SOT-89

100V/2A, RDS(ON)= 180mΩ@VGS= 10V

High density cell design for extremely low RDS (ON)

Exceptional on-resistance and maximum DC current

capability

SOT-89 package design

PART MARKING

2012/07/26 V.1

Page 1

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