Datasheet > SPN8902

SPN8902

更新时间： 2024-11-11 12:48:59

品牌	Logo	应用领域
擎力 - SYNC-POWER		/
页数	文件大小	规格书
7页	180K
描述
N-Channel Enhancement Mode MOSFET

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SPN8902 数据手册

SPN8902

N-Channel Enhancement Mode MOSFET

DESCRIPTION

APPLICATIONS

High Frequency Small Power Switching for

MB/NB/VGA

Network DC/DC Power System

Load Switch

The SPN8902 is the N-Channel logic enhancement mode

power field effect transistor which is produced using super

high cell density DMOS trench technology. The SPN8910

has been designed specifically to improve the overall

efficiency of DC/DC converters using either synchronous or

conventional switching PWM controllers. It has been

optimized for low gate charge, low RDS(ON) and fast

switching speed.

FEATURES

PIN CONFIGURATION

SOT-223

100V/2A, RDS(ON)= 330mΩ@VGS= 10V

High density cell design for extremely low RDS (ON)

Exceptional on-resistance and maximum DC current

capability

SOT-223 package design

PART MARKING

2012/07/30 V.1

Page 1

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SPN8902S22RGB	SYNC-POWER	获取价格	N-Channel Enhancement Mode MOSFET
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