Datasheet > SPN8878T252RGB

SPN8878T252RGB

更新时间： 2024-11-11 07:03:55

品牌	Logo	应用领域
擎力 - SYNC-POWER		/
页数	文件大小	规格书
8页	216K
描述
N-Channel Enhancement Mode MOSFET

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SPN8878T252RGB 数据手册

SPN8878

N-Channel Enhancement Mode MOSFET

DESCRIPTION

APPLICATIONS

Power Management in Note book

The SPN8878 is the N-Channel logic enhancement mode

power field effect transistors are produced using high cell

density , DMOS trench technology. The SPN8878 has

been designed specifically to improve the overall

efficiency of DC/DC converters using either synchronous

or conventional switching PWM controllers. It has been

optimized for low gate charge, low R^DS(ON)and fast

switching speed.

Powered System

DC/DC Converter

Load Switch

FEATURES

PIN CONFIGURATION

TO-252

30V/20A,RDS(ON)= 12mΩ@VGS=10V

30V/15A,RDS(ON)= 17mΩ@VGS=4.5V

Super high density cell design for extremely low

RDS (ON)

Exceptional on-resistance and maximum DC

current capability

TO-252 package design

PART MARKING

2009/04/20 Ver.1

Page 1

12 3 4 5 6 7 8

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