Datasheet > SPN8457S223RG

SPN8457S223RG

更新时间： 2024-11-11 06:13:27

品牌	Logo	应用领域
擎力 - SYNC-POWER		/
页数	文件大小	规格书
8页	198K
描述
N-Channel Enhancement Mode MOSFET

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SPN8457S223RG 数据手册

SPN8457

N-Channel Enhancement Mode MOSFET

DESCRIPTION

APPLICATIONS

Power Management in Note book

DC/DC Converter

LCD Display inverter

The SPN8457 is the N-Channel logic enhancement mode

power field effect transistors are produced using high cell

density , DMOS trench technology.

This high density process is especially tailored to

minimize on-state resistance.

These devices are particularly suited for low voltage

application such as cellular phone and notebook

computer power management and other battery powered

circuits, and low in-line power loss are needed in a very

small outline surface mount package.

FEATURES

PIN CONFIGURATION(SOT-223)

30V/5.5A,RDS(ON)= 58mΩ@VGS=10V

30V/4.0A,RDS(ON)= 98mΩ@VGS=4.5V

Super high density cell design for extremely low

R^{DS (ON)}

Exceptional on-resistance and maximum DC

current capability

SOT-223 package design

PART MARKING

2007/ 08 / 01 Ver.1

Page 1

12 3 4 5 6 7 8

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