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SPN8457 PDF预览

SPN8457

更新时间: 2024-11-11 06:13:27
品牌 Logo 应用领域
擎力 - SYNC-POWER /
页数 文件大小 规格书
8页 198K
描述
N-Channel Enhancement Mode MOSFET

SPN8457 数据手册

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SPN8457  
N-Channel Enhancement Mode MOSFET  
DESCRIPTION  
APPLICATIONS  
z
z
z
Power Management in Note book  
DC/DC Converter  
LCD Display inverter  
The SPN8457 is the N-Channel logic enhancement mode  
power field effect transistors are produced using high cell  
density , DMOS trench technology.  
This high density process is especially tailored to  
minimize on-state resistance.  
These devices are particularly suited for low voltage  
application such as cellular phone and notebook  
computer power management and other battery powered  
circuits, and low in-line power loss are needed in a very  
small outline surface mount package.  
FEATURES  
PIN CONFIGURATION(SOT-223)  
‹
‹
‹
30V/5.5A,RDS(ON)= 58m@VGS=10V  
30V/4.0A,RDS(ON)= 98m@VGS=4.5V  
Super high density cell design for extremely low  
RDS (ON)  
‹
‹
Exceptional on-resistance and maximum DC  
current capability  
SOT-223 package design  
PART MARKING  
2007/ 08 / 01 Ver.1  
Page 1  

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