Datasheet > SPN8206

SPN8206

更新时间： 2024-11-12 01:17:03

品牌	Logo	应用领域
擎力 - SYNC-POWER		/
页数	文件大小	规格书
8页	368K
描述
Common-Drain Dual N-Channel Enhancement Mode MOSFET

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SPN8206 数据手册

SPN8206

Common-Drain Dual N-Channel

Enhancement Mode MOSFET

DESCRIPTION

APPLICATIONS



Power Management in Note book

Portable Equipment

Battery Powered System

DC/DC Converter

Load Switch

The SPN8206 is the Common-Drain Dual N-Channel

logic enhancement mode power field effect transistors are

produced using high cell density, DMOS trench

technology. This high density process is especially

tailored to minimize on-state resistance. These devices

are particularly suited for low voltage application,

notebook computer power management and other battery

powered circuits where high-side switching.

DSC

LCD Display inverter

FEATURES

PIN CONFIGURATION(TDFN– 6P)



20V/5.0A,RDS(ON)= 8.2mΩ@VGS= 4.5V

20V/3.0A,RDS(ON)= 11.0mΩ@VGS= 2.5V

Super high density cell design for extremely low

RDS (ON)



Exceptional on-resistance and maximum DC

current capability



ESD capability 2KV

TDFN -6P package design

PART MARKING

2013/10/21 Ver.1

Page 1

12 3 4 5 6 7 8

中文翻译

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与SPN8206相关器件

型号	品牌	获取价格	描述	数据表
SPN8206TDN6RGB	SYNC-POWER	获取价格	Common-Drain Dual N-Channel Enhancement Mode MOSFET
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SPN8330	APITECH	获取价格	Wide Band Low Power Amplifier, 0MHz Min, 1000MHz Max, SM-11, 4 PIN
SPN8439	SYNC-POWER	获取价格	N-Channel Enhancement Mode MOSFET
SPN8439S223RG	SYNC-POWER	获取价格	N-Channel Enhancement Mode MOSFET
SPN8457	SYNC-POWER	获取价格	N-Channel Enhancement Mode MOSFET
SPN8457S223RG	SYNC-POWER	获取价格	N-Channel Enhancement Mode MOSFET
SPN8464	APITECH	获取价格	Wide Band Low Power Amplifier, 0MHz Min, 400MHz Max, SM-11, 4 PIN
SPN860003	MICROCHIP	获取价格	Consumer Circuit, PDSO8, SOP-8
SPN860005	MICREL	获取价格	Consumer Circuit, PDSO8, SOIC-8