Datasheet > SPN80T10T220TGB

SPN80T10T220TGB

更新时间： 2024-11-11 12:48:51

品牌	Logo	应用领域
擎力 - SYNC-POWER		/
页数	文件大小	规格书
8页	291K
描述
N-Channel Enhancement Mode MOSFET

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SPN80T10T220TGB 数据手册

SPN80T10

N-Channel Enhancement Mode MOSFET

DESCRIPTION

APPLICATIONS



Powered System

DC/DC Converter

Load Switch

The SPN80T10 is the N-Channel logic enhancement mode

power field effect transistor which is produced using super

high cell density DMOS trench technology. The SPN80T10

has been designed specifically to improve the overall

efficiency of DC/DC converters using either synchronous or

conventional switching PWM controllers. It has been

optimized for low gate charge, low R^DS(ON)and fast

switching speed.

FEATURES

PIN CONFIGURATION

TO-220



100V/85A, RDS(ON)=7.1mΩ@VGS= 10V

High density cell design for extremely low RDS (ON)

Exceptional on-resistance and maximum DC current

capability



TO-220 package design

PART MARKING

2013/10/29 Ver.1

Page 1

12 3 4 5 6 7 8

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