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SPN7002LS23RG PDF预览

SPN7002LS23RG

更新时间: 2024-11-11 06:13:27
品牌 Logo 应用领域
擎力 - SYNC-POWER /
页数 文件大小 规格书
9页 256K
描述
N-Channel Enhancement Mode MOSFET

SPN7002LS23RG 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:compliant风险等级:5.58
Base Number Matches:1

SPN7002LS23RG 数据手册

 浏览型号SPN7002LS23RG的Datasheet PDF文件第2页浏览型号SPN7002LS23RG的Datasheet PDF文件第3页浏览型号SPN7002LS23RG的Datasheet PDF文件第4页浏览型号SPN7002LS23RG的Datasheet PDF文件第5页浏览型号SPN7002LS23RG的Datasheet PDF文件第6页浏览型号SPN7002LS23RG的Datasheet PDF文件第7页 
SPN7002L  
N-Channel Enhancement Mode MOSFET  
DESCRIPTION  
APPLICATIONS  
The SPN7002L is the N-Channel enhancement mode  
field effect transistors are produced using high cell  
density DMOS technology. These products have been  
designed to minimize on-state resistance while provide  
rugged, reliable, and fast switching performance. They  
can be used in most applications requiring up to  
300mA DC and can deliver pulsed currents up to 0.8A.  
These products are particularly suited for low voltage,  
low current applications such as small servo motor  
control, power MOSFET gate drivers, and other  
switching applications.  
z
Drivers: Relays, Solenoids, Lamps, Hammers,  
Display, Memories, Transistors, etc.  
High saturation current capability. Direct  
Logic-Level Interface: TTL/CMOS  
Battery Operated Systems  
z
z
z
Solid-State Relays  
FEATURES  
PIN CONFIGURATION(SOT-23)  
‹
‹
‹
‹
50V/0.30A , RDS(ON)= 3.5@VGS=10V  
50V/0.25A , RDS(ON)= 5.5@VGS=4.5V  
50V/0.05A , RDS(ON)= 7.5@VGS=2.5V  
Super high density cell design for extremely low  
RDS (ON)  
‹
‹
Exceptional on-resistance and maximum DC  
current capability  
SOT-23 package design  
PART MARKING  
2009/03/10 Ver.1  
Page 1  

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