Datasheet > SPN7002DS36RG

SPN7002DS36RG

更新时间： 2024-11-11 03:31:23

品牌	Logo	应用领域
擎力 - SYNC-POWER		/
页数	文件大小	规格书
9页	259K
描述
Dual N-Channel Enhancement Mode MOSFET

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SPN7002DS36RG 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.61
Base Number Matches：	1

SPN7002DS36RG 数据手册

SPN7002D

Dual N-Channel Enhancement Mode MOSFET

DESCRIPTION

APPLICATIONS

Drivers: Relays, Solenoids, Lamps, Hammers,

The SPN7002D is the Dual N-Channel enhancement

mode field effect transistors are produced using high

cell density DMOS technology. These products have

been designed to minimize on-state resistance while

provide rugged, reliable, and fast switching

performance. They can be used in most applications

requiring up to 300mA DC and can deliver pulsed

currents up to 1.0A. These products are particularly

suited for low voltage, low current applications such as

small servo motor control, power MOSFET gate

drivers, and other switching applications.

Display, Memories, Transistors, etc.

High saturation current capability. Direct

Logic-Level Interface: TTL/CMOS

Battery Operated Systems

Solid-State Relays

FEATURES

PIN CONFIGURATION ( SOT-363 / SC-70-6L )

60V/0.50A , RDS(ON)= 5.0Ω@VGS=10V

60V/0.30A , RDS(ON)= 5.5Ω@VGS=5V

Super high density cell design for extremely low

R^{DS (ON)}

Exceptional on-resistance and maximum DC

current capability

SOT-363 package design

PART MARKING

2006/09/10 Ver.1

Page 1

12 3 4 5 6 7...9

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