Datasheet > SPN6561_09

SPN6561_09

更新时间： 2024-11-11 12:18:55

品牌	Logo	应用领域
擎力 - SYNC-POWER		/
页数	文件大小	规格书
8页	182K
描述
Dual N-Channel Enhancement Mode MOSFET

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SPN6561_09 数据手册

SPN6561

Dual N-Channel Enhancement Mode MOSFET

DESCRIPTION

APPLICATIONS

Power Management in Note book

The SPN6561 is the Dual N-Channel enhancement mode

power field effect transistors are produced using high cell

density , DMOS trench technology. This high density

process is especially tailored to minimize on-state

resistance and provide superior switching performance.

These devices are particularly suited for low voltage

applications such as notebook computer power

management and other battery powered circuits where

high-side switching , low in-line power loss, and

resistance to transients are needed.

Portable Equipment

Battery Powered System

DC/DC Converter

Load Switch

DSC

LCD Display inverter

FEATURES

PIN CONFIGURATION( SOT-23-6L )

N-Channel

30V/2.8A,R^DS(ON)= 60mΩ@VGS=10V

30V/2.3A,R^DS(ON)= 80mΩ@VGS=4.5V

Super high density cell design for extremely low

RDS (ON)

Exceptional on-resistance and maximum DC

current capability

SOT-23-6L package design

PART MARKING

2009/12/05 Ver.2

Page 1

12 3 4 5 6 7 8

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型号	品牌	获取价格	描述	数据表
SPN6561S26RG	SYNC-POWER	获取价格	Dual N-Channel Enhancement Mode MOSFET
SPN6561S26RGB	SYNC-POWER	获取价格	Dual N-Channel Enhancement Mode MOSFET
SPN6562	SYNC-POWER	获取价格	Dual N-Channel Enhancement Mode MOSFET
SPN6562S26RG	SYNC-POWER	获取价格	Dual N-Channel Enhancement Mode MOSFET
SPN6573	APITECH	获取价格	5 MHz - 500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, SM-11, 4 PIN
SPN6575	APITECH	获取价格	Wide Band Low Power Amplifier, 5MHz Min, 500MHz Max, SM-11, 4 PIN
SPN6577	APITECH	获取价格	5 MHz - 500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, SM-11, 4 PIN
SPN6588	APITECH	获取价格	Wide Band Low Power Amplifier, 5MHz Min, 450MHz Max, SM-11, 4 PIN
SPN6589	APITECH	获取价格	5 MHz - 500 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER, SM-11, 4 PIN
SPN65T10	SYNC-POWER	获取价格	N-Channel Enhancement Mode MOSFET