Datasheet > SPN4972B

SPN4972B

更新时间： 2024-11-12 01:17:03

品牌	Logo	应用领域
擎力 - SYNC-POWER		/
页数	文件大小	规格书
8页	218K
描述
N-Channel Enhancement Mode MOSFET

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SPN4972B 数据手册

SPN4972B

N-Channel Enhancement Mode MOSFET

DESCRIPTION

APPLICATIONS

Power Management in Note book

The SPN4972B is the Dual N-Channel logic

enhancement mode power field effect transistors are

produced using high cell density , DMOS trench

technology.

This high density process is especially tailored to

minimize on-state resistance.

These devices are particularly suited for low voltage

application , notebook computer power management and

other battery powered circuits where high-side

switching .

Portable Equipment

Battery Powered System

DC/DC Converter

Load Switch

DSC

LCD Display inverter

FEATURES

PIN CONFIGURATION(SOP – 8P)

30V/9A,RDS(ON)= 17mΩ@VGS= 10V

30V/8A,RDS(ON)= 20mΩ@VGS= 4.5V

Super high density cell design for extremely low

RDS (ON)

Exceptional on-resistance and maximum DC

current capability

SOP – 8P package design

PART MARKING

2010/ 01/ 20 Ver.1

Page 1

12 3 4 5 6 7 8

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