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SPN4910 PDF预览

SPN4910

更新时间: 2024-11-11 06:13:27
品牌 Logo 应用领域
擎力 - SYNC-POWER /
页数 文件大小 规格书
8页 220K
描述
N-Channel Enhancement Mode MOSFET

SPN4910 数据手册

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SPN4910  
N-Channel Enhancement Mode MOSFET  
DESCRIPTION  
APPLICATIONS  
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Power Management in Note book  
The SPN4910 is the Dual N-Channel enhancement mode  
power field effect transistors are produced using high cell  
density , DMOS trench technology. This high density  
process is especially tailored to minimize on-state  
resistance and provide superior switching performance.  
These devices are particularly suited for low voltage  
applications such as notebook computer power  
management and other battery powered circuits where  
high-side switching , low in-line power loss, and  
resistance to transients are needed.  
Portable Equipment  
Battery Powered System  
DC/DC Converter  
Load Switch  
DSC  
LCD Display inverter  
FEATURES  
PIN CONFIGURATION(SOP – 8P)  
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N-Channel  
40V/10A,RDS(ON)= 20m@VGS= 10V  
40V/ 8A,RDS(ON)= 24m@VGS= 4.5V  
40V/ 6A,RDS(ON)= 30m@VGS= 2.5V  
Super high density cell design for extremely low  
RDS (ON)  
Exceptional on-resistance and maximum DC  
current capability  
SOP – 8P package design  
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PART MARKING  
2009/07/28 Ver.1  
Page 1  

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