Datasheet > SPN4900

SPN4900

更新时间： 2024-11-11 06:13:27

品牌	Logo	应用领域
擎力 - SYNC-POWER		/
页数	文件大小	规格书
9页	257K
描述
N-Channel Enhancement Mode MOSFET

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SPN4900 数据手册

SPN4900

N-Channel Enhancement Mode MOSFET

DESCRIPTION

APPLICATIONS

Power Management in Note book

The SPN4900 is the Dual N-Channel logic enhancement

mode power field effect transistors are produced using

high cell density , DMOS trench technology.

This high density process is especially tailored to

minimize on-state resistance.

These devices are particularly suited for low voltage

application , notebook computer power management and

other battery powered circuits where high-side

switching .

Portable Equipment

Battery Powered System

DC/DC Converter

Load Switch

DSC

LCD Display inverter

FEATURES

PIN CONFIGURATION(SOP – 8P)

60V/5.3A,RDS(ON)= 118mΩ@VGS= 10V

60V/4.7A,RDS(ON)= 125mΩ@VGS= 4.5V

Super high density cell design for extremely low

RDS (ON)

Exceptional on-resistance and maximum DC

current capability

SOP – 8P package design

PART MARKING

2008/ 11/ 10 Ver.1

Page 1

12 3 4 5 6 7...9

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