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SPN4526_11 PDF预览

SPN4526_11

更新时间: 2024-11-11 12:48:59
品牌 Logo 应用领域
擎力 - SYNC-POWER /
页数 文件大小 规格书
8页 204K
描述
N-Channel Enhancement Mode MOSFET

SPN4526_11 数据手册

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SPN4526  
N-Channel Enhancement Mode MOSFET  
DESCRIPTION  
APPLICATIONS  
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Power Management in Note book  
The SPN4526 is the N-Channel logic enhancement mode  
power field effect transistors are produced using high cell  
density , DMOS trench technology.  
This high density process is especially tailored to  
minimize on-state resistance.  
These devices are particularly suited for low voltage  
application , notebook computer power management and  
other battery powered circuits where high-side  
switching .  
Portable Equipment  
Battery Powered System  
DC/DC Converter  
Load Switch  
DSC  
LCD Display inverter  
FEATURES  
PIN CONFIGURATION(SOP – 8P)  
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40V/10A,RDS(ON)= 25m@VGS= 10V  
40V/ 8A,RDS(ON)= 30m@VGS= 4.5V  
40V/ 6A,RDS(ON)= 36m@VGS= 2.5V  
Super high density cell design for extremely low  
RDS (ON)  
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Exceptional on-resistance and maximum DC  
current capability  
SOP – 8P package design  
PART MARKING  
2011/10/04 Ver.2  
Page 1  

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