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SPN3414WS23RGB PDF预览

SPN3414WS23RGB

更新时间: 2024-11-11 12:18:51
品牌 Logo 应用领域
擎力 - SYNC-POWER /
页数 文件大小 规格书
8页 232K
描述
N-Channel Enhancement Mode MOSFET

SPN3414WS23RGB 数据手册

 浏览型号SPN3414WS23RGB的Datasheet PDF文件第2页浏览型号SPN3414WS23RGB的Datasheet PDF文件第3页浏览型号SPN3414WS23RGB的Datasheet PDF文件第4页浏览型号SPN3414WS23RGB的Datasheet PDF文件第5页浏览型号SPN3414WS23RGB的Datasheet PDF文件第6页浏览型号SPN3414WS23RGB的Datasheet PDF文件第7页 
SPN3414W  
N-Channel Enhancement Mode MOSFET  
DESCRIPTION  
APPLICATIONS  
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Power Management in Note book  
The SPN3414 is the N-Channel logic enhancement mode  
power field effect transistors are produced using high cell  
density , DMOS trench technology.  
This high density process is especially tailored to  
minimize on-state resistance.  
These devices are particularly suited for low voltage  
application such as cellular phone and notebook  
computer power management and other battery powered  
circuits where high-side switching , and low in-line  
power loss are needed in a very small outline surface  
mount package.  
Portable Equipment  
Battery Powered System  
DC/DC Converter  
Load Switch  
DSC  
LCD Display inverter  
FEATURES  
PIN CONFIGURATION(SOT-23)  
©
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20V/4.0A,RDS(ON)=55m@VGS=4.5V  
20V/3.4A,RDS(ON)=70m@VGS=2.5V  
20V/2.8A,RDS(ON)=90m@VGS=1.8V  
Super high density cell design for extremely low  
RDS (ON)  
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Exceptional on-resistance and maximum DC  
current capability  
SOT-23 package design  
PART MARKING  
2013/03/28 Ver.1  
Page 1  

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