Datasheet > SPN3414W

SPN3414W

更新时间： 2024-11-21 12:18:51

品牌	Logo	应用领域
擎力 - SYNC-POWER		/
页数	文件大小	规格书
8页	232K
描述
N-Channel Enhancement Mode MOSFET

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SPN3414W 数据手册

SPN3414W

N-Channel Enhancement Mode MOSFET

DESCRIPTION

APPLICATIONS

Power Management in Note book

The SPN3414 is the N-Channel logic enhancement mode

power field effect transistors are produced using high cell

density , DMOS trench technology.

This high density process is especially tailored to

minimize on-state resistance.

These devices are particularly suited for low voltage

application such as cellular phone and notebook

computer power management and other battery powered

circuits where high-side switching , and low in-line

power loss are needed in a very small outline surface

mount package.

Portable Equipment

Battery Powered System

DC/DC Converter

Load Switch

DSC

LCD Display inverter

FEATURES

PIN CONFIGURATION(SOT-23)

20V/4.0A,RDS(ON)=55mΩ@VGS=4.5V

20V/3.4A,RDS(ON)=70mΩ@VGS=2.5V

20V/2.8A,RDS(ON)=90mΩ@VGS=1.8V

Super high density cell design for extremely low

RDS (ON)

Exceptional on-resistance and maximum DC

current capability

SOT-23 package design

PART MARKING

2013/03/28 Ver.1

Page 1

12 3 4 5 6 7 8

中文翻译

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