Datasheet > SPN3402WS23RG

SPN3402WS23RG

更新时间： 2024-11-21 12:18:51

品牌	Logo	应用领域
擎力 - SYNC-POWER		/
页数	文件大小	规格书
8页	226K
描述
N-Channel Enhancement Mode MOSFET

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数据手册

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SPN3402WS23RG 数据手册

SPN3402W

N-Channel Enhancement Mode MOSFET

DESCRIPTION

APPLICATIONS

Power Management in Note book

The SPN3402W is the N-Channel logic enhancement

mode power field effect transistors are produced using

high cell density , DMOS trench technology.

This high density process is especially tailored to

minimize on-state resistance.

These devices are particularly suited for low voltage

application such as cellular phone and notebook

computer power management and other battery powered

circuits, and low in-line power loss are needed in a very

small outline surface mount package.

Portable Equipment

Battery Powered System

DC/DC Converter

Load Switch

DSC

LCD Display inverter

FEATURES

PIN CONFIGURATION ( SOT-23 )

30V/2.8A,RDS(ON)

30V/2.3A,RDS(ON)

30V/1.5A,RDS(ON)= 105mΩ@VGS=2.5V

Super high density cell design for extremely low

58mΩ@VGS=10V

65mΩ@VGS=4.5V

RDS (ON)

Exceptional on-resistance and maximum DC

current capability

SOT-23 package design

PART MARKING

2012/11/08 Ver.1

Page 1

12 3 4 5 6 7 8

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