Datasheet > SPN3400WS23RG

SPN3400WS23RG

更新时间： 2024-11-11 12:48:59

品牌	Logo	应用领域
擎力 - SYNC-POWER		/
页数	文件大小	规格书
8页	200K
描述
N-Channel Enhancement Mode MOSFET

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技术参数
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SPN3400WS23RG 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.61
Is Samacsys：	N	Base Number Matches：	1

SPN3400WS23RG 数据手册

SPN3400W

N-Channel Enhancement Mode MOSFET

DESCRIPTION

APPLICATIONS



Power Management in Note book

The SPN3400W is the N-Channel logic enhancement

mode power field effect transistors are produced using

high cell density , DMOS trench technology.

This high density process is especially tailored to

minimize on-state resistance.

These devices are particularly suited for low voltage

application such as cellular phone and notebook

computer power management and other battery powered

circuits, and low in-line power loss are needed in a very

small outline surface mount package.

Portable Equipment

Battery Powered System

DC/DC Converter

Load Switch

DSC

LCD Display inverter

FEATURES

PIN CONFIGURATION(SOT-23-3L)



30V/5.4A,RDS(ON)= 38mΩ@VGS=10V

30V/4.6A,RDS(ON)= 42mΩ@VGS=4.5V

30V/3.8A,RDS(ON)= 55mΩ@VGS=2.5V

Super high density cell design for extremely low

R^{DS (ON)}



Exceptional on-resistance and maximum DC

current capability

SOT-23-3L package design

PART MARKING

2012/01/31 Ver.2

Page 1

12 3 4 5 6 7 8

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