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SPN3400_11 PDF预览

SPN3400_11

更新时间: 2024-11-21 12:18:55
品牌 Logo 应用领域
擎力 - SYNC-POWER /
页数 文件大小 规格书
8页 182K
描述
N-Channel Enhancement Mode MOSFET

SPN3400_11 数据手册

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SPN3400  
N-Channel Enhancement Mode MOSFET  
DESCRIPTION  
APPLICATIONS  
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Power Management in Note book  
The SPN3400 is the N-Channel logic enhancement mode  
power field effect transistors are produced using high cell  
density , DMOS trench technology.  
This high density process is especially tailored to  
minimize on-state resistance.  
These devices are particularly suited for low voltage  
application such as cellular phone and notebook  
computer power management and other battery powered  
circuits, and low in-line power loss are needed in a very  
small outline surface mount package.  
Portable Equipment  
Battery Powered System  
DC/DC Converter  
Load Switch  
DSC  
LCD Display inverter  
FEATURES  
PIN CONFIGURATION(SOT-23-3L)  
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30V/5.4A,RDS(ON)= 38m@VGS=10V  
30V/4.6A,RDS(ON)= 42m@VGS=4.5V  
30V/3.8A,RDS(ON)= 55m@VGS=2.5V  
Super high density cell design for extremely low  
RDS (ON)  
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Exceptional on-resistance and maximum DC  
current capability  
SOT-23-3L package design  
PART MARKING  
2009/07/05 Ver.3  
Page 1  

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