Datasheet > SPM4012006

SPM4012006

更新时间： 2024-09-23 09:08:55

品牌	Logo	应用领域
SENSITRON		驱动器栅
页数	文件大小	规格书
5页	59K
描述
Dual MOSFET BRIDGE, With Gate Driver

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SPM4012006 数据手册

SENSITRON

SPM4012006

SEMICONDUCTOR

TECHNICAL DATA

Datasheet 5024, Preliminary

Dual MOSFET BRIDGE, With Gate Driver

DESCRIPTION: A 60 VOLT, 12 AMP, DUAL MOSFET BRIDGE

A high density Dual H-Bridge capabable of driving 12A peak at 60V. This small

footprint dual bridge contains low Rdson power FETs , FET drivers and precision

current sense reistors. The device does not need heat sinking and is housed in an

encapsulated sealed enclosure. The drive input signals are TTL compatable.

ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE

PARAMETER

(Tj=25⁰C UNLESS OTHERWISE SPECIFIED)

SYMBOL

MIN

TYP

MAX

UNIT

MOSFET SPECIFICATIONS (Per Device)

Drain-to-Source Breakdown Voltage

BV_DSS

Continuos Drain Current

T_C= 25 ^OC

I_D

T_C= 100 ^OC

8.7

Pulsed Drain Current, Pulse Width limited to 1 msec

I_DM

Zero Gate Voltage Drain Current

I_CSS

_DS= 60V, V_GS=0V T_i=25^oC

V_DS= 60 V, V_GS=0V T_i=125^oC

250

Static Drain-to-Source On Resistance,

T_j= 25 ^OC

T_j= 150 ^OC

R_DSon

7.4

9.4

mΩ

14.8

18.8

I_D= 7.5A, V_GS= 10V,

Maximum Thermal Resistance

^oC/W

^oC

R_θJC

Maximum operating Junction Temperature

T_jmax

-40

-55

150

Maximum Storage Junction Temperature

T_jmax

^oC

Rise Time

Fall Time

• 221 West Industry Court ꢀ Deer Park, NY 11729 ꢀ (631) 586 7600 FAX (631) 242 9798 •

• World Wide Web Site - http://www.sensitron.com • E-mail Address - sales@sensitron.com •

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