Datasheet > SPM1019C3-2

SPM1019C3-2

更新时间： 2024-11-09 18:06:27

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描述
Power Bridge Modules (Power Modules)

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数据手册

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SPM1019C3-2 数据手册

SPM1019C3-1

SPM1019C3-2

SENSITRON

SEMICONDUCTOR

TECHNICAL DATA

DATASHEET 6177, Preliminary

1200 VOLT, 40 AMP MOSFET FULL-BRIDGE MODULE

Features:

• Electrically isolated, base-less construction

• Light weight low profile standard package

• Aluminum Nitride substrate

• High temperature engineering plastic shell construction

ELECTRICAL CHARACTERISTICS PER MOSFET LEG

(T_J=25°C UNLESS OTHERWISE SPECIFIED)

SYMBOL

PARAMETER

MIN

TYP

MAX

UNIT

MOSFET SPECIFICATIONS

Drain to Source Breakdown Voltage

I_D= 100 A, V_GS= 0V

BV_DSS

1200

Continuous Drain Current

T_C= 25°C

T_C= 100°C

I_D

I_D(pulse)

VGS

I_GSS

Pulsed Drain Current, pulse width t_plimited by t_jmax

Gate to Source Voltage static

dynamic

Gate-Source Leakage Current , V_GS= +15V / -4V, V_DS= 0V

120

-4/+15

8/+19

250

Gate Threshold Voltage,

I_D= 10mA, V_DS= V_GS

T_J= 25°C

T_J= 150°C

1.8

2.5

2.1

3.6

V_GS(th)

Zero Gate Voltage Drain Current

V_DS= 1200 V, V_GS=0V

Drain-Source On-State Resistance

I_D= 40A, V_GS= 15V

I_DSS

µA

T_J= 25°C

T_J= 150°C

R_DS(on)

mΩ

C_iss

C_oss

C_rss

Input Capacitance

Output Capacitance

Reverse Transfer Cap.

V_DS= 200 V, V_GS= 0 V, f = 100 kHz, V_AC= 25 mV

Turn On Delay Time

Rise Time

Turn Off Delay Time

Fall Time

3357

250

t_D(on)

t_R

t_D(off)

t_F

V_DS= 800 V, I_D= 20A, V_GS= -4/+15V, R_G= 2.5

Timing relative to V_DS, inductive load

Turn on Energy Loss

E_ON

E_OFF

325

Turn off Energy Loss

µJ

V_DS= 600 V, I_D= 40A, V_GS= -4/+15V, R_G= 2.5, L=65.7µH

Internal Gate Resistance

f = 1MHz, V_AC= 25mV

Gate to Source Charge

Gate to Drain Charge

R_G(int)

1.7

Ω

Q_GS

Q_GD

Q_G

118

Total Gate Charge

V_DS= 800 V, I_D= 40A, V_GS= -4/+15V

@ 2023 Sensitron Semiconductor • PHONE (631) 586-7600 • FAX (631) 242-9798 • www.sensitron.com • sales@sensitron.com •

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