Datasheet > SPM1019A3-1

SPM1019A3-1

更新时间： 2024-09-22 18:06:27

品牌	Logo	应用领域
SENSITRON		/
页数	文件大小	规格书
6页	341K
描述
Power Bridge Modules (Power Modules)

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数据手册

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SPM1019A3-1 数据手册

SPM1019A3-1

SPM1019A3-2

SENSITRON

SEMICONDUCTOR

TECHNICAL DATA

DATASHEET 6179, Preliminary

1200 VOLT, 30 AMP MOSFET FULL-BRIDGE MODULE

Features:

• Electrically isolated, base-less construction

• Light weight low profile standard package

• Aluminum Nitride substrate

• High temperature engineering plastic shell construction

ELECTRICAL CHARACTERISTICS PER MOSFET LEG

(T_J=25°C UNLESS OTHERWISE SPECIFIED)

SYMBOL

PARAMETER

MIN

TYP

MAX

UNIT

MOSFET SPECIFICATIONS

Drain to Source Breakdown Voltage

I_D= 100 A, V_GS= 0V

Continuous Drain Current

BV_DSS

1200

T_C= 25°C

T_C= 100°C

-4/+15

-8/+19

I_D

I_D(pulse)

V_GS

Pulsed Drain Current, pulse width t_plimited by t_jmax

Gate to Source Voltage

static

dynamic

Gate-Source Leakage Current

V_GS= +15V / -4V, V_DS= 0V

Gate Threshold Voltage,

I_D= 5mA, V_DS= V_GS

Zero Gate Voltage Drain Current

V_DS= 1200 V, V_GS=0V

Drain-Source On-State Resistance

I_D= 18A, V_GS= 15V

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

V_DS= 200 V, V_GS= 0 V, f = 1 MHz, V_AC= 25 mV

Turn On Delay Time

Rise Time

Turn Off Delay Time

Fall Time

V_DS= 800 V, I_D= 20A, V_GS= -4/+15V, R_G= 2.5

Timing relative to V_DS, inductive load

Turn on Energy Loss

Turn off Energy Loss

V_DS= 600 V, I_D= 20A, V_GS= -4/+15V, R_G= 2.5, L = 135µH

I_GSS

V_GS(th)

I_DSS

250

4.0

T_J= 25°C

T_J= 150°C

1.8

2.6

2.2

µA

mΩ

T_J= 25°C

T_J= 150°C

130

1480

R_DS(on)

C_iss

C_oss

C_rss

3.2

t_D(on)

t_R

t_D(off)

t_F

E_ON

E_OFF

180

µJ

Ω

Internal Gate Resistance

f = 1MHz, V_AC= 25mV

Gate to Source Charge

Gate to Drain Charge

R_G(int)

Q_GS

Q_GD

Q_G

Total Gate Charge

V_DS= 800 V, I_D= 18A, V_GS= -4/+15V

12 3 4 5 6

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