Datasheet > SPM1019A2-2

SPM1019A2-2

更新时间： 2024-09-22 18:06:27

品牌	Logo	应用领域
SENSITRON		/
页数	文件大小	规格书
6页	344K
描述
Power Bridge Modules (Power Modules)

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中文翻译

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数据手册

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SPM1019A2-2 数据手册

SPM1019A2-1

SPM1019A2-2

SENSITRON

SEMICONDUCTOR

TECHNICAL DATA

DATASHEET 6182, REV -

1200 VOLT, 30 AMP MOSFET FULL-BRIDGE MODULE

Features:

• Electrically isolated, base-less construction

• Light weight low profile standard package

• Aluminum Nitride substrate

• High temperature engineering plastic shell construction

• S100 Screening per Sensitron Document 2044

ELECTRICAL CHARACTERISTICS PER MOSFET LEG

(T_J=25°C UNLESS OTHERWISE SPECIFIED)

SYMBOL

PARAMETER

MIN

TYP

MAX

UNIT

MOSFET SPECIFICATIONS

Drain to Source Breakdown Voltage

I_D= 100 A, V_GS= 0V

Continuous Drain Current

BV_DSS

1200

T_C= 25°C

T_C= 100°C

-10/+25

250

I_D

I_D(pulse)

V_GS

Pulsed Drain Current, pulse width t_plimited by T_jmax

Gate to Source Voltage

I_GSS

Gate-Source Leakage Current , V_GS= +20V / -5V

Gate Threshold Voltage,

I_D= 5mA, V_DS= V_GS

Zero Gate Voltage Drain Current

V_DS= 1200 V, V_GS=0V

Drain-Source On-State Resistance

I_D= 20A, V_GS= 20V

Input Capacitance

Output Capacitance

Reverse Transfer Cap.

V_DS= 1000 V, V_GS= 0 V, f = 1 MHz, V_AC= 25 mV

T_J= 25°C

T_J= 150°C

2.0

1.4

2.9

2.4

4.0

3.4

V_GS(th)

I_DSS

100

µA

mΩ

T_J= 25°C

T_J= 150°C

164

1130

105

201

R_DS(on)

C_iss

C_oss

C_rss

7.5

Turn On Delay Time

Rise Time

Turn Off Delay Time

Fall Time

t_D(on)

t_R

t_D(off)

t_F

V_DS= 800 V, I_D= 20A, V_GS= -5/+20V, R_G= 2.5, R_L= 40

Avalanche Energy, Single Pulse

I_D= 20A, V_DS= 50V

E_AS

523

Turn on Energy Loss

Turn off Energy Loss

V_DS= 800 V, I_D= 20A, V_GS= -5/+20V, R_G= 2.5, L = 156µH

E_ON

E_OFF

µJ

Ω

Internal Gate Resistance

f = 1MHz, V_AC= 25mV

R_G(int)

3.9

12 3 4 5 6

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