Datasheet > SPM1016

SPM1016

更新时间： 2024-09-22 18:09:03

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描述
Power Bridge Modules (Power Modules)

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SPM1016 数据手册

SPM1016

SPM1016-1

SENSITRON

SEMICONDUCTOR

DATASHEET 5528, REV -

1200 VOLT, 50 AMP MOSFET FULL BRIDGE MODULE

Features

 Electrically isolated, base-less construction

 Light weight, low profile standard package

 Aluminum nitride substrate

 High temperature engineering plastic shell construction

ELECTRICAL CHARACTERISTICS PER MOSFET LEG

(Tj=25⁰C UNLESS OTHERWISE SPECIFIED)

SYMBOL

PARAMETER

MIN

TYP

MAX

UNIT

MOSFET SPECIFICATIONS

Drain to Source Breakdown Voltage

I_D= 100 A, V_GS= 0V

Continuous Drain Current

BV_DSS

1200

T_C= 25°C

T_C= 100°C

I_D

I_D(pulse)

V_GS

Pulsed Drain Current, 1ms

180

-10/+25

600

Gate to Source Voltage

I_GSS

Gate-Source Leakage Current , V_GS= +20V

Gate Threshold Voltage,

I_D= 15mA, V_DS= V_GS

Zero Gate Voltage Drain Current

V_DS= 1200 V, V_GS=0V

Drain-Source On-State Resistance

I_D= 50A, V_GS= 20V

Input Capacitance

Output Capacitance

Reverse Transfer Cap.

V_DS= 800 V, V_GS= 0 V, f = 1 MHz, V_AC= 25 mV

T_J= 25°C

T_J= 150°C

1.8

1.4

2.6

2.2

4.2

3.8

V_GS(th)

I_DSS

100

µA

mΩ

T_J= 25°C

T_J= 150°C

2810

393

R_DS(on)

C_iss

C_oss

C_rss

Turn On Delay Time

Rise Time

Turn Off Delay Time

Fall Time

t_D(on)

t_R

t_D(off)

t_F

V_DS= 800 V, I_D= 50A, V_GS= -5/+20V, R_G= 2.5, R_L= 16

Avalanche Energy, Single Pulse

I_D= 50A, V_DS= 50V

E_AS

3.5

Turn on Energy Loss

Turn off Energy Loss

E_ON

E_OFF

1400

300

µJ

Ω

V_DS= 800 V, I_D= 50A, V_GS= -5/+20V, R_G= 2.5, L = 412µH

Internal Gate Resistance

f = 1MHz, V_AC= 25mV

Gate to Source Charge

Gate to Drain Charge

R_G(int)

1.1

Q_GS

Q_GD

Q_G

161

Total Gate Charge

V_DS= 800 V, I_D= 50A, V_GS= -5/+20V

(631) 586 7600 FAX (631) 242 9798  www.sensitron.com  sales@sensitron.com  Page 1

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