SPM1015
SPM1015-1
SENSITRON
SEMICONDUCTOR
DATASHEET 5527, REV -
1200 VOLT, 50 AMP MOSFET SIX PACK MODULE
Features
Electrically isolated, base-less construction
Light weight, low profile standard package
Aluminum nitride substrate
High temperature engineering plastic shell construction
ELECTRICAL CHARACTERISTICS PER MOSFET LEG
(Tj=250C UNLESS OTHERWISE SPECIFIED)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNIT
MOSFET SPECIFICATIONS
Drain to Source Breakdown Voltage
ID = 100 A, VGS = 0V
Continuous Drain Current
BVDSS
1200
-
-
-
-
V
A
TC = 25°C
TC = 100°C
90
60
ID
ID(pulse)
VGS
Pulsed Drain Current, 1ms
-
-
-
-
-
-
180
-10/+25
600
A
V
Gate to Source Voltage
IGSS
Gate-Source Leakage Current , VGS = +20V
nA
Gate Threshold Voltage,
ID = 15mA, VDS = VGS
Zero Gate Voltage Drain Current
VDS = 1200 V, VGS=0V
Drain-Source On-State Resistance
ID = 50A, VGS = 20V
Input Capacitance
Output Capacitance
Reverse Transfer Cap.
VDS = 800 V, VGS = 0 V, f = 1 MHz, VAC = 25 mV
TJ = 25°C
TJ = 150°C
1.8
1.4
2.6
2.2
4.2
3.8
VGS(th)
IDSS
V
-
2
100
µA
mΩ
TJ = 25°C
TJ = 150°C
-
-
-
-
-
35
56
2810
393
14
40
69
-
-
-
RDS(on)
Ciss
Coss
Crss
pF
ns
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
tD(on)
tR
tD(off)
tF
-
-
-
-
14
32
29
28
-
-
-
-
VDS = 800 V, ID = 50A, VGS = -5/+20V, RG = 2.5, RL = 16
Avalanche Energy, Single Pulse
ID = 50A, VDS = 50V
EAS
-
3.5
-
J
Turn on Energy Loss
Turn off Energy Loss
EON
EOFF
-
-
1400
300
-
-
µJ
Ω
VDS = 800 V, ID = 50A, VGS = -5/+20V, RG = 2.5, L = 412µH
Internal Gate Resistance
f = 1MHz, VAC = 25mV
Gate to Source Charge
Gate to Drain Charge
RG(int)
-
-
1.1
-
-
QGS
QGD
QG
46
50
161
nC
Total Gate Charge
VDS = 800 V, ID = 50A, VGS = -5/+20V
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