Datasheet > SPM1014

SPM1014

更新时间： 2024-09-22 18:09:23

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描述
Power Bridge Modules (Power Modules)

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SPM1014 数据手册

SPM1014

SPM1014-1

SENSITRON

SEMICONDUCTOR

DATASHEET 5507 REV B

600 VOLT, 75 AMP IGBT SIX-PACK MODULE

Features

 Electrically isolated, base-less construction

 Light weight, low profile standard package

 Aluminum nitride substrate

 High temperature engineering plastic shell construction

ELECTRICAL CHARACTERISTICS PER IGBT LEG

(Tj=25⁰C UNLESS OTHERWISE SPECIFIED)

SYMBOL

PARAMETER

MIN

TYP

MAX

UNIT

IGBT SPECIFICATIONS

Collector to Emitter Breakdown Voltage

I_D= 200 A, V_GS= 0V

Continuous Collector Current

BV_CES

600

I_C

I_C(pulse)

V_GE

T_C= 100°C

Pulsed Collector Current, 1ms

Gate to Emitter Voltage

225

±20

100

I_GES

Gate-Emitter Leakage Current , V_GS= +20V

Gate Threshold Voltage

I_C= 1.2mA, V_CE= V_GE

Zero Gate Voltage Collector Current

V_CE= 600 V, V_GS=0V

Collector-Emitter Saturation Voltage

I_C= 75A, V_GE= 15V

Short Circuit Collector Current

V_CC= 400 V, V_GE= 15V, t_SC≤ 5µs

Input Capacitance

Output Capacitance

Reverse Transfer Cap.

V_CE= 25 V, V_GE= 0 V, f = 1 MHz

Turn On Delay Time

Rise Time

Turn Off Delay Time

Fall Time

V_CE= 400 V, I_C= 75A, V_GE= 0/+15V, R_G= 5, L = 100nH, C = 39pF

V_GE(th)

I_CES

V_CE(sat)

I_C(sc)

4.1

4.9

6.5

µA

T_J= 25°C

T_J= 150°C

T_J= 25°C

T_J= 150°C

5000

2.2

1.8

2.1

687

C_ies

C_oes

C_res

4620

288

137

t_D(on)

t_R

t_D(off)

t_F

330

2.0

2.5

4.5

Turn on Energy Loss

Turn off Energy Loss

Total Switching Energy

V_CE= 400 V, I_C= 75A, V_GE= 0/+15V, R_G= 5, L = 100nH, C = 39pF

E_ON

E_OFF

E_TS

2.9

5.8

Turn on Energy Loss

Turn off Energy Loss

Total Switching Energy

V_CE= 400 V, I_C= 75A, V_GE= 0/+15V, R_G= 5, L = 100nH, C = 39pF

T_J= 150°C

E_ON

E_OFF

E_TS

Q_G

Total Gate Charge

V_CE= 480 V, I_C= 75A, V_GE= 15V

470

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