Datasheet > SPM1013C

SPM1013C

更新时间： 2024-11-18 18:05:03

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SENSITRON		/
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描述
Power Bridge Modules (Power Modules)

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中文翻译

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数据手册

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SPM1013C 数据手册

SPM1013X

SPM1013X-1

SPM1013X-2

SENSITRON

SEMICONDUCTOR

X: A / B / C

DATASHEET 5490, REV C

1200 VOLT, 40 AMP MOSFET FULL-BRIDGE MODULE

Features

• Electrically isolated, base-less construction

• Light weight, low profile standard package

• Aluminum nitride substrate

• High temperature engineering plastic shell construction

• Enhanced die coating

• Die back metal change from Silver to Gold

ELECTRICAL CHARACTERISTICS PER MOSFET LEG

(T_J=25°C UNLESS OTHERWISE SPECIFIED)

SYMBOL

PARAMETER

MIN

TYP

MAX

UNIT

MOSFET SPECIFICATIONS

Drain to Source Breakdown Voltage

I_D= 100 A, V_GS= 0V

Continuous Drain Current

BV_DSS

I_D

1200

T_C= 25°C

T_C= 100°C

I_D(pulse)

V_GS

Pulsed Drain Current, 1ms

160

-10/+25

250

Gate to Source Voltage

I_GSS

Gate-Source Leakage Current , V_GS= +20V

Gate Threshold Voltage,

I_D= 10mA, V_DS= V_GS

Zero Gate Voltage Drain Current

V_DS= 1200 V, V_GS=0V

Drain-Source On-State Resistance

I_D= 40A, V_GS= 20V

Input Capacitance

Output Capacitance

Reverse Transfer Cap.

V_DS= 1000 V, V_GS= 0 V, f = 1 MHz, V_AC= 25 mV

T_J= 25°C

T_J= 150°C

2.0

1.4

3.2

2.3

4.0

3.2

V_GS(th)

I_DSS

100

µA

mΩ

T_J= 25°C

T_J= 150°C

1893

150

115

R_DS(on)

C_iss

C_oss

C_rss

Turn On Delay Time

Rise Time

Turn Off Delay Time

Fall Time

t_D(on)

t_R

t_D(off)

t_F

V_DS= 800 V, I_D= 40A, V_GS= -5/+20V, R_G= 2.5, R_L= 20

Avalanche Energy, Single Pulse

I_D= 40A, V_DS= 50V

E_AS

Turn on Energy Loss

Turn off Energy Loss

E_ON

E_OFF

1000

400

µJ

Ω

V_DS= 800 V, I_D= 40A, V_GS= -5/+20V, R_G= 2.5, L = 80µH

Internal Gate Resistance

f = 1MHz, V_AC= 25mV

Gate to Source Charge

Gate to Drain Charge

R_G(int)

1.8

Q_GS

Q_GD

Q_G

131

Total Gate Charge

V_DS= 800 V, I_D= 40A, V_GS= -5/+20V

12 3 4 5 6

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