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SPM1013B PDF预览

SPM1013B

更新时间: 2024-09-22 18:05:03
品牌 Logo 应用领域
SENSITRON /
页数 文件大小 规格书
6页 439K
描述
Power Bridge Modules (Power Modules)

SPM1013B 数据手册

 浏览型号SPM1013B的Datasheet PDF文件第2页浏览型号SPM1013B的Datasheet PDF文件第3页浏览型号SPM1013B的Datasheet PDF文件第4页浏览型号SPM1013B的Datasheet PDF文件第5页浏览型号SPM1013B的Datasheet PDF文件第6页 
SPM1013X  
SPM1013X-1  
SPM1013X-2  
SENSITRON  
SEMICONDUCTOR  
X: A / B / C  
DATASHEET 5490, REV C  
1200 VOLT, 40 AMP MOSFET FULL-BRIDGE MODULE  
Features  
Electrically isolated, base-less construction  
Light weight, low profile standard package  
Aluminum nitride substrate  
High temperature engineering plastic shell construction  
Enhanced die coating  
Die back metal change from Silver to Gold  
ELECTRICAL CHARACTERISTICS PER MOSFET LEG  
(TJ=25°C UNLESS OTHERWISE SPECIFIED)  
SYMBOL  
PARAMETER  
MIN  
TYP  
MAX  
UNIT  
MOSFET SPECIFICATIONS  
Drain to Source Breakdown Voltage  
ID = 100 A, VGS = 0V  
Continuous Drain Current  
BVDSS  
ID  
1200  
-
-
-
-
V
A
TC = 25°C  
TC = 100°C  
60  
40  
ID(pulse)  
VGS  
Pulsed Drain Current, 1ms  
-
-
-
-
-
-
160  
-10/+25  
250  
A
V
Gate to Source Voltage  
IGSS  
Gate-Source Leakage Current , VGS = +20V  
nA  
Gate Threshold Voltage,  
ID = 10mA, VDS = VGS  
Zero Gate Voltage Drain Current  
VDS = 1200 V, VGS=0V  
Drain-Source On-State Resistance  
ID = 40A, VGS = 20V  
Input Capacitance  
Output Capacitance  
Reverse Transfer Cap.  
VDS = 1000 V, VGS = 0 V, f = 1 MHz, VAC = 25 mV  
TJ = 25°C  
TJ = 150°C  
2.0  
1.4  
3.2  
2.3  
4.0  
3.2  
VGS(th)  
IDSS  
V
-
1
100  
µA  
mΩ  
TJ = 25°C  
TJ = 150°C  
-
-
-
-
-
45  
89  
1893  
150  
10  
57  
115  
-
-
-
RDS(on)  
Ciss  
Coss  
Crss  
pF  
ns  
Turn On Delay Time  
Rise Time  
Turn Off Delay Time  
Fall Time  
tD(on)  
tR  
tD(off)  
tF  
-
-
-
-
15  
52  
26  
34  
-
-
-
-
VDS = 800 V, ID = 40A, VGS = -5/+20V, RG = 2.5, RL = 20  
Avalanche Energy, Single Pulse  
ID = 40A, VDS = 50V  
EAS  
-
2
-
J
Turn on Energy Loss  
Turn off Energy Loss  
EON  
EOFF  
-
-
1000  
400  
-
-
µJ  
VDS = 800 V, ID = 40A, VGS = -5/+20V, RG = 2.5, L = 80µH  
Internal Gate Resistance  
f = 1MHz, VAC = 25mV  
Gate to Source Charge  
Gate to Drain Charge  
RG(int)  
-
-
1.8  
-
-
QGS  
QGD  
QG  
29  
45  
131  
nC  
Total Gate Charge  
VDS = 800 V, ID = 40A, VGS = -5/+20V  
©2022 Sensitron Semiconductor (631) 586 7600 FAX (631) 242 9798 www.sensitron.com sales@sensitron.comPage 1  

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