Datasheet > SPM1009A

SPM1009A

更新时间： 2024-09-21 20:39:23

品牌	Logo	应用领域
SENSITRON		栅
页数	文件大小	规格书
4页	242K
描述
Insulated Gate Bipolar Transistor

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技术参数
数据手册

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SPM1009A 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.68	Base Number Matches：	1

SPM1009A 数据手册

SPM1009

SPM1009A

SENSITRON

SEMICONDUCTOR

DATASHEET 5448, REV -

600 VOLT, 16 AMP LOW LOSS ULTRAFAST IGBT THREE PHASE

BRIDGE MODULE

Features

 Isolated base plate

 Light weight low profile standard package

 Aluminum Nitride substrate

 High temperature engineering plastic shell construction

ELECTRICAL CHARACTERISTICS PER IGBT LEG

(Tj=25⁰C UNLESS OTHERWISE SPECIFIED)

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

IGBT SPECIFICATIONS

Collector to Emitter Breakdown Voltage

I_C= 200 A, V_GE= 0V

BV_CES

600

Continuous Collector Current

T_C= 25 ^OC

T_C= 100 ^OC

I_C

Pulsed Collector Current, 1ms

Gate to Emitter Voltage

I_CM

V_GE

+/-20

Gate-Emitter Leakage Current , V_GE= +/-20V

I_GES

+/- 100

5.7

Gate Threshold Voltage, I_C= 0.43 mA

Zero Gate Voltage Collector Current

V_CE= 600 V, V_GE=0V T_i=25^oC

V_CE= 480 V, V_GE=0V T_i=125^oC

V _GE(TH)

I_CES

4.1

0.1

1.0

Collector to Emitter Saturation Voltage

T_C= 25 ^OC I_C= 16A, V_GE= 15V

T_C= 125 ^OC I_C= 16A, V_GE= 15V

V_CE(SAT)

2.2

2.6

Input Capacitance

Output Capacitance

Reverse Transfer Cap.

V_CE= 25 V, V_GE= 0 V, f = 1 MHz

C_ies

C_oes

C_res

1630

108

220

Turn On Delay Time

Rise Time

Turn Off Delay Time

Fall Time

t_d(on)

t_r

t_d(off)

t_f

Turn on Energy Loss

Turn off Energy Loss (Including diode reverse recovery)

(T_j= 25^OC, I_C= 16A, V_GE= 15V, V_CE= 400 V, R_G= 10 )

E_on

E_off

0.69

0.33

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