Datasheet > SPM1008

SPM1008

更新时间： 2024-11-10 18:09:39

品牌	Logo	应用领域
SENSITRON		/
页数	文件大小	规格书
3页	303K
描述
Power Bridge Modules (Power Modules)

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中文翻译

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数据手册

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SPM1008 数据手册

SENSITRON

SEMICONDUCTOR

TECHNICAL DATA

SPM1008

DATA SHEET 5411, REV. -

1200 VOLT, 30 AMP THREE PHASE SILICON CARBIDE

MOSFET BRIDGE

FEATURES:



80mΩ typical on-resistance

Isolated base plate

Aluminum Nitride substrate

Light Weight Low Profile Standard Package

High Temperature Engineering Plastic Shell Construction

Schematic Diagram:

MAXIMUM RATINGS

RATING

ALL RATINGS ARE @ T_C= 25 C UNLESS OTHERWISE SPECIFIED.

SYMBOL

V_DSS

I_D

MAX

1200

UNITS

DRAIN-SOURCE VOLTAGE

CONTINUOUS DRAIN CURRENT

CONTINUOUS DRAIN CURRENT, T_C= 100 ^OC

PULSED DRAIN CURRENT (t ≤10μs, dc ≤1%)

GATE - SOURCE VOLTAGE

I_D

I_D,pulse

V_GSS

P_d

-5 to 25

125

MAXIMUM POWER DISSIPATION, T_C= 25 ^OC (PER MOSFET)

MAXIMUM THERMAL RESISTANCE

1.0

R__JC

Tstg

Top

C/W

C

MAXIMUM STORAGE TEMPERATURE RANGE

MAXIMUM OPERATING TEMPERATURE RANGE

-55 to 150

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