Datasheet > SPM1006

SPM1006

更新时间： 2024-11-11 18:09:35

品牌	Logo	应用领域
SENSITRON		/
页数	文件大小	规格书
4页	245K
描述
Power Bridge Modules (Power Modules)

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中文翻译

获取价格

数据手册

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SPM1006 数据手册

SENSITRON

SEMICONDUCTOR

SPM1006

TECHNICAL DATA

DATASHEET 5384, Rev. B

600 VOLT, 40 AMP LOW LOSS ULTRAFAST IGBT THREE PHASE

BRIDGE MODULE

Features

 Trench stop third generation IGBT

 Soft, fast recovery diode for minimal EMI

 Isolated base plate

 Aluminum nitride substrate

 Light weight low profile standard package

 High temperature engineering plastic shell construction

ELECTRICAL CHARACTERISTICS PER IGBT LEG

(Tj=25⁰C UNLESS OTHERWISE SPECIFIED)

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

IGBT SPECIFICATIONS

Collector to Emitter Breakdown Voltage

I_C= 2 mA, V_GE= 0V

BV_CES

600

Continuous Collector Current

T_C= 25 ^OC

T_C= 100 ^OC

I_C

Pulsed Collector Current, 1ms

Gate to Emitter Voltage

I_CM

160

V_GE

+/-20

+/- 100

5.7

Gate-Emitter Leakage Current , V_GE= +/-20V

I_GES

Gate Threshold Voltage, I_C= 0.58 mA

Zero Gate Voltage Collector Current

V_CE= 600 V, V_GE=0V T_i=25^oC

V_CE= 480 V, V_GE=0V T_i=125^oC

V _GE(TH)

I_CES

4.1

0.1

1.5

Collector to Emitter Saturation Voltage

T_C= 25 ^OC I_C= 20A, V_GE= 15V

T_C= 125 ^OC I_C= 20A, V_GE= 15V

V_CE(SAT)

1.95

2.30

2.40

Input Capacitance

Output Capacitance

C_ies

C_oes

2190

112

V_CE= 25 V, V_GE= 0 V, f = 1 MHz

240

Turn On Delay Time

Rise Time

t_d(on)

t_r

t_d(off)

t_f

Turn Off Delay Time

Fall Time

(T_j= 25^OC, I_C= 20A, V_GE= 15V, V_CE= 400 V, R_G= 8 )

Turn on Energy Loss

E_on

E_off

1.10

0.58

Turn off Energy Loss

(T_j= 25^OC, I_C= 20A, V_GE= 15V, V_CE= 400 V, R_G= 8 )

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