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SPF5344ZSR PDF预览

SPF5344ZSR

更新时间: 2024-01-19 12:32:38
品牌 Logo 应用领域
威讯 - RFMD 放大器射频微波
页数 文件大小 规格书
8页 550K
描述
0.8GHz to 4GHz, GaAs pHEMT 2-STAGE LOW NOISE MMIC AMPLIFIER

SPF5344ZSR 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:LCC20,.16SQ,20Reach Compliance Code:compliant
ECCN代码:5A991.GHTS代码:8542.33.00.01
风险等级:5.67特性阻抗:50 Ω
构造:COMPONENT增益:22.1 dB
最大输入功率 (CW):24 dBm安装特点:SURFACE MOUNT
功能数量:1端子数量:20
最大工作频率:4000 MHz最小工作频率:800 MHz
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装等效代码:LCC20,.16SQ,20
电源:5 V射频/微波设备类型:WIDE BAND MEDIUM POWER
子类别:RF/Microwave Amplifiers表面贴装:YES
技术:GAAS最大电压驻波比:10
Base Number Matches:1

SPF5344ZSR 数据手册

 浏览型号SPF5344ZSR的Datasheet PDF文件第2页浏览型号SPF5344ZSR的Datasheet PDF文件第3页浏览型号SPF5344ZSR的Datasheet PDF文件第4页浏览型号SPF5344ZSR的Datasheet PDF文件第5页浏览型号SPF5344ZSR的Datasheet PDF文件第6页浏览型号SPF5344ZSR的Datasheet PDF文件第7页 
SPF5344Z  
0.8GHz to  
4GHz, GaAs  
pHEMT 2-  
Stage Low  
Noise MMIC  
Amplifier  
SPF5344Z  
0.8GHz to 4GHz, GaAs pHEMT 2-STAGE LOW  
NOISE MMIC AMPLIFIER  
Product Description  
Features  
The SPF5344Z is a high performance 2-Stage pHEMT MMIC LNA designed Low Noise Figure=0.80dB at  
2.0GHz  
for use from 0.8GHz to 4GHz. It offers low noise figure and high linearity in  
a gain block configuration. Its single-supply operation and integrated  
matching networks make implementation remarkably simple. The off-chip  
interstage choke and DC block allow for optimum performance tuning.  
Gain=24.5dB at 2.0GHz  
OIP3=39dBm at 2.0GHz  
Excellent Return Loss:  
S11>20dB, S22>20dB at  
2.0GHz  
Gain, RL & NF versus Frequency  
30  
20  
10  
0
1.75  
1.50  
1.25  
1.00  
0.75  
0.50  
0.25  
0.00  
S21  
Optimum Technology  
Matching® Applied  
P1dB=22.4dBm at 2.0GHz  
Gain  
IRL  
Single-Supply Operation: 5V at  
Idq=120mA  
GaAs HBT  
ORL  
NF  
GaAs MESFET  
InGaP HBT  
SiGe BiCMOS  
Si BiCMOS  
SiGe HBT  
NF  
Flexible Biasing Options: 3-5V,  
Adjustable Current  
-10  
-20  
-30  
-40  
S11  
Broadband Internal Matching  
S22  
GaAs pHEMT  
Applications  
Cellular, PCS, W-CDMA, ISM,  
WiMAX Receivers  
Si CMOS  
Si BJT  
1.7  
1.8  
1.9  
2.0  
2.1  
2.2  
2.3  
2.4  
2.5  
Frequency (GHz)  
GaN HEMT  
InP HBT  
RF MEMS  
LDMOS  
PA Driver Amplifier  
Low Noise, High Linearity Gain  
Block Applications  
Frequency=0.9GHz  
Frequency=2.0GHz  
Frequency=2.2GHz  
Parameter  
Unit  
Condition  
Min.  
Typ.  
34.5  
0.70  
35.5  
Max.  
Min.  
Typ.  
24.5  
0.80  
39.0  
Max.  
26.9  
Min.  
Typ.  
22.5  
0.90  
39.0  
Max.  
Small Signal Power Gain  
Noise Figure  
Output Third Order  
Intercept Point  
22.1  
dB  
dB  
dBm  
35  
Output Power at 1dB  
Compression  
21.8  
22.4  
22.7  
dBm  
Input Return Loss  
Output Return Loss  
Reverse Isolation  
25.0  
25.0  
32.5  
5.0  
dB  
dB  
dB  
V
Device Operating Voltage  
5.0  
5.0  
Device Operating Current  
(Quiescent)  
100  
120  
160  
100  
120  
160  
100  
120  
160  
mA  
Thermal Resistance  
(junction-to-lead)  
1st stage  
Thermal Resistance  
(junction-to-lead)  
2nd stage  
65  
65  
65  
65  
65  
65  
°C/W  
°C/W  
Note: V =5.0V, I =120mA OIP Tone Spacing=1MHz, P  
per tone=0dBm and Z =Z =50, 25°C, Application Circuit Data.  
S L  
D
DQ  
3
OUT  
The typical noise figure values include evaluation board losses.  
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-  
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
DS110805  
1 of 8  

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