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SPD5807TXVASMS PDF预览

SPD5807TXVASMS

更新时间: 2024-09-25 09:30:59
品牌 Logo 应用领域
SSDI 功效二极管
页数 文件大小 规格书
2页 155K
描述
Rectifier Diode, 1 Phase, 1 Element, 6A, 50V V(RRM), Silicon, HERMETICALLY SEALED, 2 PIN

SPD5807TXVASMS 技术参数

生命周期:Active包装说明:HERMETICALLY SEALED, 2 PIN
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.84应用:EFFICIENCY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:O-XELF-R2最大非重复峰值正向电流:125 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:6 A
封装主体材料:UNSPECIFIED封装形状:ROUND
封装形式:LONG FORM认证状态:Not Qualified
最大重复峰值反向电压:50 V最大反向恢复时间:0.04 µs
表面贴装:YES端子形式:WRAP AROUND
端子位置:END

SPD5807TXVASMS 数据手册

 浏览型号SPD5807TXVASMS的Datasheet PDF文件第2页 
SPD5807 thru SPD5811 Series  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
6.0 AMPS  
50 150 VOLTS  
40 ns HYPERFAST RECOVERY  
Designer’s Data Sheet  
RECTIFIER  
Part Number/Ordering Information 1/  
SPD __ __ __  
Screening 2/  
__ = Not Screened  
TX = TX Level  
TXV = TXV  
FEATURES:  
Hyper Fast Reverse Recovery: 40ns Maximum 4/  
PIV to 150 Volts (Voltages Up To 300V Available)  
Hermetically Sealed  
S = S Level  
Package Type  
Low Forward Voltage Drop  
Void Free Chip Construction  
For High Efficiency Applications  
Available in Axial & Square Tab Versions  
TX, TXV, and S-Level Screening Available 2/  
Replacement for: 1N 5807, US thru 1N5811, US  
__ = Axial Leaded  
SMS = Surface Mount Square Tab  
ASMS = SMS with .240” Max. Body Length  
Voltage/Family  
5807 = 50V  
5809 = 100V  
5811 = 150V  
MAXIMUM RATINGS 3/  
RATING  
SYMBOL VALUE  
UNIT  
Peak Repetitive Reverse  
Voltage  
VRRM  
VRWM  
VR  
SPD5807  
SPD5809  
SPD5811  
50  
100  
150  
Volts  
And  
DC Blocking Voltage  
6.0  
Average Rectified Forward Current (Resistive Load, 60Hz, Sine Wave, TA = 25°C )  
IO  
Amps  
Amps  
Peak Surge Current  
125  
IFSM  
(8.3 ms pulse, half sine wave, superimposed on Io, allow  
junction to reach equilibrium between pulses, TA = 25°C)  
TJ and  
TSTG  
-65 to +175  
Operating & Storage Temperature  
°C  
Junction to Lead for Axial, L =.375"  
Thermal Resistance  
RθJL  
20  
12  
°C/W  
Junction to End Tab for Surface Mount  
RθJE  
NOTES:  
Axial Leaded  
SMS  
1/ For Ordering Information, Price, Operating Curves, and Availability- Contact Factory.  
2/ Screened to MIL-PRF-19500.  
3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.  
4/ IF = 500mA, IR = 1A, IRR = 250mA, TA = 25°C  
NOTE: All specifications are subject to change without notification.  
DATA SHEET #: RC0108A  
DOC  
SCD's for these devices should be reviewed by SSDI prior to release.  

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