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SPC8M011-060 PDF预览

SPC8M011-060

更新时间: 2024-11-30 03:24:35
品牌 Logo 应用领域
SENSITRON /
页数 文件大小 规格书
7页 87K
描述
Standard Industrial Grade MOSFET Power Modules

SPC8M011-060 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:MODULE
包装说明:FLANGE MOUNT, R-XUFM-X12针数:12
Reach Compliance Code:unknown风险等级:5.92
配置:COMPLEX最小漏源击穿电压:600 V
最大漏极电流 (ID):11 A最大漏源导通电阻:0.55 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-XUFM-X12
湿度敏感等级:1元件数量:4
端子数量:12工作模式:ENHANCEMENT MODE
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):45 A
认证状态:Not Qualified表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

SPC8M011-060 数据手册

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SENSITRON  
SEMICONDUCTOR  
SPXXMXXX-XXX  
DATA SHEET 658, REV. -  
Standard Industrial Grade MOSFET Power Modules  
FEATURES:  
œ High Power Density  
œ Low Drain to Source Resistance (RDS(on)  
)
œ Low Thermal Resistance (R  
)
JC  
INDUSTRIAL MOSFET PRODUCT MAP  
ID (Amps)  
10  
-
25  
-
50  
-
100  
200  
-
300  
-
400  
CONFIG-  
URATION  
VDSS  
(V)  
SPM1M350-006  
SPM1M400-006  
60  
-
Single  
SPM1M250-010  
SPM1M300-010  
100  
300  
-
-
-
-
-
-
-
-
-
SPM1M130-030  
SPM1M160-030  
SPM1M090-060  
-
-
SPM1M070-060  
600  
-
-
-
-
-
-
-
-
-
-
SPM1M045-100  
SPM1M065-100  
1000  
-
SPM2M200-006  
SPM2M250-006  
SPM2M200-010  
60  
-
-
-
-
-
-
Half-  
Bridge  
SPM2M150-010  
100  
300  
-
-
-
-
-
-
-
-
-
-
SPM2M080-030  
-
-
-
SPM2M120-030  
-
SPM2M040-060  
600  
-
-
-
-
-
-
-
SPM2M050-060  
-
SPM2M025-100  
SPM2M035-100  
-
1000  
SPC4M075-006  
SPM4M130-006  
SPM4M130-010  
60  
-
-
-
-
-
-
-
-
-
-
SPC4M045-010  
SPC4M075-010  
SPC4M050-020  
100  
SPC4M030-020  
200  
300  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
H-Bridge  
SPC4M040-030  
SPM4M040-060  
SPM4M080-030  
-
SPC4M020-060  
600  
-
-
-
SPC4M012-100  
SPM4M024-100  
1000  
-
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798  
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com  

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