Datasheet > SPC6605ST6RG

SPC6605ST6RG

更新时间： 2024-11-28 12:18:55

品牌	Logo	应用领域
擎力 - SYNC-POWER		/
页数	文件大小	规格书
10页	299K
描述
N & P Pair Enhancement Mode MOSFET

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技术参数
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SPC6605ST6RG 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.61
Base Number Matches：	1

SPC6605ST6RG 数据手册

SPC6605

N & P Pair Enhancement Mode MOSFET

DESCRIPTION

APPLICATIONS

Power Management in Note book

The SPC6605 is the N- and P-Channel enhancement

mode power field effect transistors are produced using

high cell density DMOS trench technology. This high

density process is especially tailored to minimize on-state

resistance and provide superior switching performance.

These devices are particularly suited for low voltage

applications such as notebook computer power

management and other battery powered circuits where

high-side switching, low in-line power loss, and

resistance to transients are needed.

Portable Equipment

Battery Powered System

DC/DC Converter

Load Switch

DSC

LCD Display inverter

FEATURES

PIN CONFIGURATION( TSOP– 6P )

N-Channel

20V/3.6A,R^DS(ON)=97mΩ@VGS=4.5V

20V/3.1A,R^DS(ON)=113mΩ@VGS=2.5V

P-Channel

-20V/-2.4A,R^DS(ON)= 128mΩ@VGS=-4.5V

-20V/-2.0A,R^DS(ON)=188mΩ@VGS=-2.5V

Super high density cell design for extremely low

RDS (ON)

TSOP– 6P package design

PART MARKING

2011/8/1 Preliminary

Page 1

12 3 4 5 6 7...10

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