Datasheet > SPC6602ST6RGB

SPC6602ST6RGB

更新时间： 2024-11-25 12:18:55

品牌	Logo	应用领域
擎力 - SYNC-POWER		/
页数	文件大小	规格书
11页	244K
描述
N & P Pair Enhancement Mode MOSFET

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SPC6602ST6RGB 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.58
Base Number Matches：	1

SPC6602ST6RGB 数据手册

SPC6602

N & P Pair Enhancement Mode MOSFET

DESCRIPTION

APPLICATIONS

Power Management in Note book

The SPC6602 is the N- and P-Channel enhancement

mode power field effect transistors are produced using

high cell density , DMOS trench technology. This high

density process is especially tailored to minimize on-state

resistance and provide superior switching performance.

These devices are particularly suited for low voltage

applications such as notebook computer power

management and other battery powered circuits where

high-side switching , low in-line power loss, and

resistance to transients are needed.

Portable Equipment

Battery Powered System

DC/DC Converter

Load Switch

DSC

LCD Display inverter

FEATURES

PIN CONFIGURATION( TSOP– 6P )

N-Channel

30V/2.8A,R^DS(ON)= 60mΩ@VGS=10V

30V/2.3A,R^DS(ON)= 80mΩ@VGS=4.5V

P-Channel

-30V/-2.8A,R^DS(ON)=105mΩ@VGS=- 10V

-30V/-2.5A,R^DS(ON)=135mΩ@VGS=-4.5V

Super high density cell design for extremely low

RDS (ON)

Exceptional on-resistance and maximum DC

current capability

TSOP– 6P package design

PART MARKING

2010/10/28 Ver.5

Page 1

12 3 4 5 6 7...11

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