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SPC6602 PDF预览

SPC6602

更新时间: 2024-11-28 04:03:15
品牌 Logo 应用领域
擎力 - SYNC-POWER /
页数 文件大小 规格书
11页 266K
描述
N & P Pair Enhancement Mode MOSFET

SPC6602 数据手册

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SPC6602  
N & P Pair Enhancement Mode MOSFET  
DESCRIPTION  
APPLICATIONS  
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Power Management in Note book  
The SPC6602 is the N- and P-Channel enhancement  
mode power field effect transistors are produced using  
high cell density , DMOS trench technology. This high  
density process is especially tailored to minimize on-state  
resistance and provide superior switching performance.  
These devices are particularly suited for low voltage  
applications such as notebook computer power  
management and other battery powered circuits where  
high-side switching , low in-line power loss, and  
resistance to transients are needed.  
Portable Equipment  
Battery Powered System  
DC/DC Converter  
Load Switch  
DSC  
LCD Display inverter  
FEATURES  
PIN CONFIGURATION( TSOP– 6P )  
‹
N-Channel  
30V/2.8A,RDS(ON)= 60m@VGS=10V  
30V/2.3A,RDS(ON)= 80m@VGS=4.5V  
P-Channel  
‹
-30V/-2.8A,RDS(ON)=105m@VGS=- 10V  
-30V/-2.5A,RDS(ON)=135m@VGS=-4.5V  
Super high density cell design for extremely low  
RDS (ON)  
Exceptional on-resistance and maximum DC  
current capability  
‹
‹
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TSOP– 6P package design  
PART MARKING  
2006/03/20 Ver.3  
Page 1  

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