Datasheet > SPB02N60S5_07

SPB02N60S5_07

更新时间： 2024-09-24 06:13:11

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
10页	342K
描述
Cool MOS™ Power Transistor Feature New revolutionary high voltage technology

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中文翻译

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SPB02N60S5_07 数据手册

SPB02N60S5

Cool MOS™ Power Transistor

Feature

• New revolutionary high voltage technology

600

1.8

Ω

DS(on)

• Ultra low gate charge

PG-TO263

• Periodic avalanche rated

• Extreme dv/dt rated

• Ultra low effective capacitances

• Improved transconductance

Type

SPB02N60S5

Package

PG-TO263

Ordering Code

Q67040-S4212

Marking

02N60S5

Maximum Ratings

Parameter

Symbol

Value

Unit

Continuous drain current

T = 25 °C

1.8

1.1

3.2

T = 100 °C

Pulsed drain current, t limited by T

Avalanche energy, single pulse

jmax

D puls

I = 1.35 A, V = 50 V

jmax

0.07

1.8

Avalanche energy, repetitive t limited by T

I = 1.8 A, V = 50 V

Avalanche current, repetitive t limited by T

jmax AR

Gate source voltage

±20

Gate source voltage AC (f >1Hz)

tot

Power dissipation, T = 25°C

°C

Operating and storage temperature

T , T

-55... +150

stg

Page 1

Rev. 2.4

2007-02-14

12 3 4 5 6 7...10

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