Datasheet > SPA663-01SSAB

SPA663-01SSAB

更新时间： 2024-09-25 20:04:55

品牌	Logo	应用领域
SSDI		二极管
页数	文件大小	规格书
2页	223K
描述
Bridge Rectifier Diode,

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SPA663-01SSAB 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.69	二极管类型：	BRIDGE RECTIFIER DIODE
Base Number Matches：	1

SPA663-01SSAB 数据手册

SPA663 Series

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

20 kV, 2 AMPS

HIGH VOLTAGE

RECTIFIER BRIDGE MULTIPLIER

Designer’s Data Sheet

Part Number/Ordering Information ^1/

__ __ __

SPA663-

FEATURES:



Aerospace High Voltage Power Supply Applications

Optimized for TWT Power Supplies

Low Mechanical Stress Design

│

└

│

└

└ Finish

__ = Standard Case

SAB = Sand Blasted Case

Screening ^2/

TX, TXV, and Space Level Screening Available

Consult Factory For:

__ = Not Screened

TX = TX Level

TXV = TXV Level

S = Space Level



Higher Blocking Voltages

Faster Switching Times

Other Electrical Configurations Available

Available with a sandblasted case to promote adhesion add

“SAB” suffix

Dash Number ^3/

MAXIMUM RATINGS

CHARACTERISTIC

SYMBOL

VALUE

UNIT

Peak Repetitive Reverse and DC Blocking Voltage^3/

SPA663-01

T_C= 55ºC

V_{R (MODULE)}

(Module)

V_{R (Br1 – Br 4)}

V_{R (Br5 – Br 8)}

I_{O (Br1 – Br 4)}

I_{O (Br5 – Br 8)}

I_{FSM (Br1 – Br 4)}

I_{FSM (Br5 – Br 8)}

2.0

3.0

Peak Repetitive Reverse and DC Blocking Voltage

(Each Bridge)

2.0

0.4

Average Rectified Forward Current

(Each Bridge)

100

Peak Surge Current

(Each Bridge: Non-Repetitive, t = 8.3 msec Pulse, T_A= 25ºC)

ºC

Storage & Operating Temperature Range

T_OP& T_STG

-65 to +150

R_{θJB (Br1 – Br 4)}

R_{θJB (Br5 – Br 8)}

Thermal Resistance, Junction to Base

(Each Bridge)

ºC/W

ELECTRICAL CHARACTERISTICS, Each Bridge Leg, @ T_A= 25ºC (Unless Otherwise Specified)

PARAMETER

SYMBOL

MIN

MAX

UNIT

Instantaneous Forward Voltage Drop

(pulsed)

I_F1= 2.0 A _{(Br1 – Br 4)}

I_F1= 0.4 A _{(Br5 – Br 8)}

V_{F1 (Br1 – Br 4)}

V_{F1 (Br5 – Br 8)}

–

3.5

10.5

T_a= 25ºC, Vr = 2.0 kV _{(Br1 – Br 4)}

T_a= 25ºC, Vr = 2.0 kV _{(Br5 – Br 8)}

T_a= 100ºC, Vr = 2.0 kV _{(Br1 – Br 4)}

T_a= 100ºC, Vr = 2.0 kV _{(Br5 – Br 8)}

I_{R1 (Br1-Br4)}

I_{R1 (Br5-Br8)}

I_{R2 (Br1-Br4)}

I_{R2 (Br5-Br8)}

–

1.0

–

Reverse Leakage

(pulsed)

μA

All Terminals to Base @ 20 kV

Insulation Resistance

R_INSUL

–

GΩ

t_{rr (Br1-Br4)}

t_{rr (Br5-Br8)}

Reverse Recovery Time

(I_F= 0.5 A, I_R= 1.0 A, I_RR= 0.25 A)

nsec

Notes: 1/ For ordering information, price, and availability- Contact factory.

2/ Screened based on MIL-PRF-19500. Screening flows available on request.

3/ For each dash number, refer to V_R(MODULE)rating, schematic, and outline.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: RA0111A

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