Datasheet > SPA20N60CFD_09

SPA20N60CFD_09

更新时间： 2024-09-28 06:13:11

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
12页	378K
描述
CoolMOSTM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated

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SPA20N60CFD_09 数据手册

SPA20N60CFD

CoolMOS^TMPower Transistor

Features

Product Summary

V _DS

600

0.22

20.7

Ω

• New revolutionary high voltage technology

• Intrinsic fast-recovery body diode

R _DS(on),max

I _D

• Extremely low reverse recovery charge

• Ultra low gate charge

PG-TO220FP

• Extreme dv /dt rated

• High peak current capability

• Periodic avalanche rated

• Qualified according to JEDEC⁰⁾for target applications

• Pb-free lead plating; RoHS compliant

Type

Package

Ordering Code

Marking

SPA20N60CFD

PG-TO220FP

SP000216361

20N60CFD

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

Continuous drain current¹⁾

I _D

T _C=25 °C

T _C=100 °C

T _C=25 °C

20.7

13.1

Pulsed drain current²⁾

I _D,pulse

E _AS

E _AR

I _AR

I _D=10 A, V _DD=50 V

I _D=20 A, V _DD=50 V

Avalanche energy, single pulse

690

2),3)

Avalanche energy, repetitive t _AR

Avalanche current, repetitive t _AR

Drain source voltage slope

Reverse diode dv /dt

I _D=20.7 A,

dv /dt

V/ns

_DS=480 V, T _j=125 °C

I _S=20.7 A, V _DS=480 V,

T _j=125 °C

900

±20

±30

Maximum diode commutation speed di /dt

A/µs

V _GS

Gate source voltage

static

AC (f >1 Hz)

P _tot

T _C=25 °C

Power dissipation

T _j, T _stg

-55 ... +150

Operating and storage temperature

°C

Rev. 1.3

page 1

2009-12-22

12 3 4 5 6 7...12

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