是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | DIP, DIP16,.3 | Reach Compliance Code: | unknown |
风险等级: | 5.92 | JESD-30 代码: | R-XDIP-T16 |
JESD-609代码: | e0 | 端子数量: | 16 |
最高工作温度: | 70 °C | 最低工作温度: | -30 °C |
封装主体材料: | CERAMIC | 封装代码: | DIP |
封装等效代码: | DIP16,.3 | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 认证状态: | Not Qualified |
子类别: | PLL or Frequency Synthesis Circuits | 表面贴装: | NO |
温度等级: | OTHER | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子节距: | 2.54 mm |
端子位置: | DUAL | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SP8922 | ETC |
获取价格 |
40 CHANNEL CITIZENS BAND SYNTHESISER IC SETS | |
SP8923 | ETC |
获取价格 |
40 CHANNEL CITIZENS BAND SYNTHESISER IC SETS | |
SP8J1 | ROHM |
获取价格 |
Switching (−30V, −5.0A) | |
SP8J1TB | ROHM |
获取价格 |
Power Field-Effect Transistor, 5A I(D), 30V, 0.042ohm, 2-Element, P-Channel, Silicon, Meta | |
SP8J2 | ROHM |
获取价格 |
Switching (−30V, −4.5A) | |
SP8J2TB | ROHM |
获取价格 |
暂无描述 | |
SP8J3 | ROHM |
获取价格 |
4V Drive Pch+Pch MOS FET | |
SP8J3FU6TB | ROHM |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
SP8J3TB | ROHM |
获取价格 |
Power Field-Effect Transistor, 3.5A I(D), 30V, 0.09ohm, 2-Element, P-Channel, Silicon, Met | |
SP8J4 | ROHM |
获取价格 |
Switching (−30V, −2.0A) |