Datasheet > SP6628

SP6628

更新时间： 2024-09-17 19:33:27

品牌	Logo	应用领域
美高森美 - MICROSEMI		超快恢复二极管快速恢复二极管局域网
页数	文件大小	规格书
4页	250K
描述
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.75A, 600V V(RRM), Silicon, HERMETIC SEALED, GLASS, E, 2 PIN

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技术参数
数据手册

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SP6628 技术参数

是否Rohs认证：	不符合	生命周期：	Active
包装说明：	O-LALF-W2	针数：	2
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.62
其他特性：	HIGH RELIABILITY	应用：	ULTRA FAST RECOVERY
外壳连接：	ISOLATED	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	1.5 V	JESD-30 代码：	O-LALF-W2
JESD-609代码：	e0	最大非重复峰值正向电流：	75 A
元件数量：	1	相数：	1
端子数量：	2	最高工作温度：	150 °C
最低工作温度：	-65 °C	最大输出电流：	1.75 A
封装主体材料：	GLASS	封装形状：	ROUND
封装形式：	LONG FORM	参考标准：	MIL-19500
最大重复峰值反向电压：	600 V	最大反向电流：	2 µA
最大反向恢复时间：	0.045 µs	表面贴装：	NO
技术：	AVALANCHE	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	WIRE	端子位置：	AXIAL
Base Number Matches：	1

SP6628 数据手册

1N6626 thru 1N6631

VOIDLESS-HERMETICALLY-SEALED

ULTRA FAST RECOVERY GLASS

RECTIFIERS

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-

19500/590 and is ideal for high-reliability applications where a failure cannot be

tolerated. These industry-recognized 2.0 to 4.0 Amp rated rectifiers for working

peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-

glass construction using an internal “Category I” metallurgical bond. These devices

are also available in surface mount MELF package configurations by adding a “US”

suffix (see separate data sheet for 1N6626US thru 1N6631US). Microsemi also

offers numerous other rectifier products to meet higher and lower current ratings

with various recovery time speed requirements including standard, fast and ultrafast

device types in both through-hole and surface mount packages.

“E” Package

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Popular JEDEC registered 1N6626 to 1N6631 series

Voidless hermetically sealed glass package

Extremely robust construction

•

Ultrafast recovery rectifier series 200 to 1000 V

Military and other high-reliability applications

Switching power supplies or other applications

requiring extremely fast switching & low forward

loss

High forward surge current capability

Low thermal resistance

Triple-layer passivation

Internal “Category I” Metallurgical bonds

•

JAN, JANTX, and JANTXV available per MIL-PRF-

19500/590

Controlled avalanche with peak reverse power

capability

•

Further options for screening in accordance with MIL-

PRF-19500 for JANS by using a “SP” prefix, e.g. SP6626,

SP6629, etc.

•

Inherently radiation hard as described in Microsemi

MicroNote 050

Surface mount equivalents also available in a square end-

cap MELF configuration with “US” suffix (see separate

data sheet for 1N6626US thru 1N6631US)

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Junction Temperature: -65^oC to +150^oC

Storage Temperature: -65^oC to +175^oC

•

CASE: Hermetically sealed voidless hard glass

with Tungsten slugs

Peak Forward Surge Current @ 25^oC: 75A (except

1N6631 which is 60A)

TERMINATIONS: Axial-leads are Tin/Lead

(Sn/Pb) over Copper.

•

MARKING: Body painted and part number, etc.

POLARITY: Cathode indicated by band

Tape & Reel option: Standard per EIA-296

Weight: 750 mg

Note: Test pulse = 8.3ms, half-sine wave.

•

Average Rectified Forward Current (I_O) at T_L= +75^oC

(L=.375 inch from body):

1N6626 thru 1N6628

1N6629 thru 1N6631

2.3 A

1.8 A

See package dimensions on last page

(Derate I_Olinearly at 1.0%/^oC for T_L> +75^oC)

•

Average Rectified Forward Current (I_O) at T_A=25^oC:

1N6626 thru 1N6628

1N6629 thru 1N6631

1.75 A

1.40 A

(Derate I_Olinearly at 0.80%/ ^oC for T_A>+25^oC. This I_O

rating is typical for PC boards where thermal resistance

from mounting point to ambient is sufficiently controlled

where T_J(max)is not exceeded. See MIL-PRF-19500/590)

•

Thermal Resistance L= 0.375 inch (R_θ_JL): 22^oC/W

Capacitance at V_R= 10 V: 40 pF

Solder temperature: 260^oC for 10 s (maximum)

10-01-2009 REV F; SA7-57.pdf

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

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与SP6628相关器件

型号	品牌	获取价格	描述	数据表
SP6629	MICROSEMI	获取价格	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.4A, 800V V(RRM), Silicon, HERMETIC SEALE
SP6630	MICROSEMI	获取价格	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.4A, 900V V(RRM), Silicon, HERMETIC SEALE
SP6631	MICROSEMI	获取价格	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.4A, 1000V V(RRM), Silicon, HERMETIC SEAL
SP6639CN	SIPEX	获取价格	Switching Regulator, 1A, PDSO8, SOIC-8
SP6639CN/TR	SIPEX	获取价格	Switching Regulator, 1A, PDSO8, PLASTIC, SOIC-8
SP6639CP	EXAR	获取价格	Switching Regulator, 1A, PDIP8, PLASTIC, DIP-8
SP6640CN	SIPEX	获取价格	Switching Regulator, 1A, PDSO8, SOIC-8
SP6640CN/TR	EXAR	获取价格	Switching Regulator, 1A, PDSO8, PLASTIC, SOIC-8
SP6640CN/TR	SIPEX	获取价格	Switching Regulator, 1A, PDSO8, PLASTIC, SOIC-8
SP6640CN-L/TR	EXAR	获取价格	Switching Regulator, 1A, PDSO8, PLASTIC, SOIC-8

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